Tellurium doping study of GaSb grown by molecular beam epitaxy using SnTe

Jenn-Fang Chen; A. Y. Cho

doi:10.1016/0022-0248(91)91051-B

Tellurium doping study of GaSb grown by molecular beam epitaxy using SnTe

Jenn-Fang Chen^*, A. Y. Cho

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The application of SnTe as a tellurium source of donor impurities in the growth of n-type GaSb by molecular beam epitaxy (MBE) is investigated. We obtained Hall carrier concentrations ranging from 1.23×10¹⁶ to 3.7×10¹⁸ cm^-3. At a growth temperature of 500°C, the estimated donor concentrations are proportional to the arrival rate of the molecular dopants up to 3×10¹⁸ cm^-3. Room-temperature Hall mobilities as high as 5114 cm²/V⋯s were measured for a GaSb layer with n_H=3.8×10¹⁶ cm^-3. These results, coupled with the intensitivity of the electron concentration to the Sb₄/Ga flux ratio, at a growth temperature of 500°C, may lead to SnTe being one of the donor dopants of choice in the MBE growth of n-type GaSb.

Original language	English
Pages (from-to)	619-622
Number of pages	4
Journal	Journal of Crystal Growth
Volume	111
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(91)91051-B
State	Published - 2 May 1991

Access to Document

10.1016/0022-0248(91)91051-B

Cite this

@article{9f1a5332a95e45dfad024c24cd741797,

title = "Tellurium doping study of GaSb grown by molecular beam epitaxy using SnTe",

abstract = "The application of SnTe as a tellurium source of donor impurities in the growth of n-type GaSb by molecular beam epitaxy (MBE) is investigated. We obtained Hall carrier concentrations ranging from 1.23×1016 to 3.7×1018 cm-3. At a growth temperature of 500°C, the estimated donor concentrations are proportional to the arrival rate of the molecular dopants up to 3×1018 cm-3. Room-temperature Hall mobilities as high as 5114 cm2/V⋯s were measured for a GaSb layer with nH=3.8×1016 cm-3. These results, coupled with the intensitivity of the electron concentration to the Sb4/Ga flux ratio, at a growth temperature of 500°C, may lead to SnTe being one of the donor dopants of choice in the MBE growth of n-type GaSb.",

author = "Jenn-Fang Chen and Cho, {A. Y.}",

year = "1991",

month = may,

day = "2",

doi = "10.1016/0022-0248(91)91051-B",

language = "English",

volume = "111",

pages = "619--622",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Tellurium doping study of GaSb grown by molecular beam epitaxy using SnTe

AU - Chen, Jenn-Fang

AU - Cho, A. Y.

PY - 1991/5/2

Y1 - 1991/5/2

N2 - The application of SnTe as a tellurium source of donor impurities in the growth of n-type GaSb by molecular beam epitaxy (MBE) is investigated. We obtained Hall carrier concentrations ranging from 1.23×1016 to 3.7×1018 cm-3. At a growth temperature of 500°C, the estimated donor concentrations are proportional to the arrival rate of the molecular dopants up to 3×1018 cm-3. Room-temperature Hall mobilities as high as 5114 cm2/V⋯s were measured for a GaSb layer with nH=3.8×1016 cm-3. These results, coupled with the intensitivity of the electron concentration to the Sb4/Ga flux ratio, at a growth temperature of 500°C, may lead to SnTe being one of the donor dopants of choice in the MBE growth of n-type GaSb.

AB - The application of SnTe as a tellurium source of donor impurities in the growth of n-type GaSb by molecular beam epitaxy (MBE) is investigated. We obtained Hall carrier concentrations ranging from 1.23×1016 to 3.7×1018 cm-3. At a growth temperature of 500°C, the estimated donor concentrations are proportional to the arrival rate of the molecular dopants up to 3×1018 cm-3. Room-temperature Hall mobilities as high as 5114 cm2/V⋯s were measured for a GaSb layer with nH=3.8×1016 cm-3. These results, coupled with the intensitivity of the electron concentration to the Sb4/Ga flux ratio, at a growth temperature of 500°C, may lead to SnTe being one of the donor dopants of choice in the MBE growth of n-type GaSb.

UR - http://www.scopus.com/inward/record.url?scp=0026413134&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(91)91051-B

DO - 10.1016/0022-0248(91)91051-B

M3 - Article

AN - SCOPUS:0026413134

SN - 0022-0248

VL - 111

SP - 619

EP - 622

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Tellurium doping study of GaSb grown by molecular beam epitaxy using SnTe

Abstract

Access to Document

Other files and links

Fingerprint

Cite this