TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology

Kai Jhih Gan; Po-Tsun Liu; Yu Chuan Chiu; Dun Bao Ruan; Ta Chun Chien; Simon M. Sze

doi:10.1016/j.surfcoat.2018.08.093

TAOS based Cu/TiW/IGZO/Ga₂O₃/Pt bilayer CBRAM for low-power display technology

Kai Jhih Gan
, Po-Tsun Liu^*
, Yu Chuan Chiu
, Dun Bao Ruan
, Ta Chun Chien
, Simon M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

We demonstrate the characteristics of a conductive-bridging random access memory (CBRAM) with Cu/TiW/InGaZnO/Ga₂O₃/Pt stack structure. The addition of a thin metal-oxide layer (4.5 nm-thick Ga₂O₃) in the bottom of the CBRAM device significantly increases the off-state resistance (R_OFF) and the memory window. The IGZO bi-layer CBRAM shows the excellent memory performances, such as low operation current (down to 50 μA), high on/off resistance ratio (>10³), high switching endurance (up to 10³ cycles) and the capability of multi-level tuning. Meanwhile, high thermal stability was also achieved. Three decades of resistance window is constantly maintained beyond 10⁴ s at 85 °C. The resistive switching stability and electrical uniformity of bi-layer IGZO/Ga₂O₃ CBRAM device are obviously enhanced as compared with the one only with a single layer of IGZO film. These results have given a great potential for the transparent amorphous oxide semiconductor (TAOS)-based material utilizing in CBRAM stacks and integrating into the display circuits for future memory-in-pixel applications.

Original language	English
Pages (from-to)	169-174
Number of pages	6
Journal	Surface and Coatings Technology
Volume	354
DOIs	https://doi.org/10.1016/j.surfcoat.2018.08.093
State	Published - 25 Nov 2018

Keywords

Conductive-bridge random access memory (CBRAM)
Gallium oxide
Indium-gallium-zinc-oxide
Physical vapor deposition
Thermal conductivity

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10.1016/j.surfcoat.2018.08.093

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@article{8333c6c3099d4857bac2f04c5e84392d,

title = "TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology",

abstract = "We demonstrate the characteristics of a conductive-bridging random access memory (CBRAM) with Cu/TiW/InGaZnO/Ga2O3/Pt stack structure. The addition of a thin metal-oxide layer (4.5 nm-thick Ga2O3) in the bottom of the CBRAM device significantly increases the off-state resistance (ROFF) and the memory window. The IGZO bi-layer CBRAM shows the excellent memory performances, such as low operation current (down to 50 μA), high on/off resistance ratio (>103), high switching endurance (up to 103 cycles) and the capability of multi-level tuning. Meanwhile, high thermal stability was also achieved. Three decades of resistance window is constantly maintained beyond 104 s at 85 °C. The resistive switching stability and electrical uniformity of bi-layer IGZO/Ga2O3 CBRAM device are obviously enhanced as compared with the one only with a single layer of IGZO film. These results have given a great potential for the transparent amorphous oxide semiconductor (TAOS)-based material utilizing in CBRAM stacks and integrating into the display circuits for future memory-in-pixel applications.",

keywords = "Conductive-bridge random access memory (CBRAM), Gallium oxide, Indium-gallium-zinc-oxide, Physical vapor deposition, Thermal conductivity",

author = "Gan, \{Kai Jhih\} and Po-Tsun Liu and Chiu, \{Yu Chuan\} and Ruan, \{Dun Bao\} and Chien, \{Ta Chun\} and Sze, \{Simon M.\}",

year = "2018",

month = nov,

day = "25",

doi = "10.1016/j.surfcoat.2018.08.093",

language = "English",

volume = "354",

pages = "169--174",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology

AU - Gan, Kai Jhih

AU - Liu, Po-Tsun

AU - Chiu, Yu Chuan

AU - Ruan, Dun Bao

AU - Chien, Ta Chun

AU - Sze, Simon M.

PY - 2018/11/25

Y1 - 2018/11/25

N2 - We demonstrate the characteristics of a conductive-bridging random access memory (CBRAM) with Cu/TiW/InGaZnO/Ga2O3/Pt stack structure. The addition of a thin metal-oxide layer (4.5 nm-thick Ga2O3) in the bottom of the CBRAM device significantly increases the off-state resistance (ROFF) and the memory window. The IGZO bi-layer CBRAM shows the excellent memory performances, such as low operation current (down to 50 μA), high on/off resistance ratio (>103), high switching endurance (up to 103 cycles) and the capability of multi-level tuning. Meanwhile, high thermal stability was also achieved. Three decades of resistance window is constantly maintained beyond 104 s at 85 °C. The resistive switching stability and electrical uniformity of bi-layer IGZO/Ga2O3 CBRAM device are obviously enhanced as compared with the one only with a single layer of IGZO film. These results have given a great potential for the transparent amorphous oxide semiconductor (TAOS)-based material utilizing in CBRAM stacks and integrating into the display circuits for future memory-in-pixel applications.

AB - We demonstrate the characteristics of a conductive-bridging random access memory (CBRAM) with Cu/TiW/InGaZnO/Ga2O3/Pt stack structure. The addition of a thin metal-oxide layer (4.5 nm-thick Ga2O3) in the bottom of the CBRAM device significantly increases the off-state resistance (ROFF) and the memory window. The IGZO bi-layer CBRAM shows the excellent memory performances, such as low operation current (down to 50 μA), high on/off resistance ratio (>103), high switching endurance (up to 103 cycles) and the capability of multi-level tuning. Meanwhile, high thermal stability was also achieved. Three decades of resistance window is constantly maintained beyond 104 s at 85 °C. The resistive switching stability and electrical uniformity of bi-layer IGZO/Ga2O3 CBRAM device are obviously enhanced as compared with the one only with a single layer of IGZO film. These results have given a great potential for the transparent amorphous oxide semiconductor (TAOS)-based material utilizing in CBRAM stacks and integrating into the display circuits for future memory-in-pixel applications.

KW - Conductive-bridge random access memory (CBRAM)

KW - Gallium oxide

KW - Indium-gallium-zinc-oxide

KW - Physical vapor deposition

KW - Thermal conductivity

UR - https://www.scopus.com/pages/publications/85053322017

U2 - 10.1016/j.surfcoat.2018.08.093

DO - 10.1016/j.surfcoat.2018.08.093

M3 - Article

AN - SCOPUS:85053322017

SN - 0257-8972

VL - 354

SP - 169

EP - 174

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

ER -

TAOS based Cu/TiW/IGZO/Ga₂O₃/Pt bilayer CBRAM for low-power display technology

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Keywords

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