@inproceedings{bc288ec02d8f4ded8e5972979b355c92,
title = "T-Shaped Gated Poly-Si Thin-Film Transistor Technology for Advanced Logic and RF Applications",
abstract = "In this talk we propose a novel T-gate poly-Si TFT process scheme which can be employed for the construction of advanced system-on-panel products. Several unique features, including T-gate, ingenious doping profile, silicided gate/source/drain, and sidewall air spacers, are combined in the fabricated devices and are beneficial for improving device performance. Principles and skills about the self-aligned formation of these structural features are detailed. Potential merits brought about by the proposed scheme with design considerations in source/drain doping profile specifically for logic and RF devices are also revealed and demonstrated.",
author = "Lin, \{Horng Chih\} and Lee, \{Cheng Kuei\} and Yu, \{Po Hsun\} and Li, \{Pei Wen\} and Chen, \{Kun Ming\} and Huang, \{Guo Wei\}",
note = "Publisher Copyright: {\textcopyright} 2022 International Society of Functional Thin Film Materals \& Devices (FTFMD).; 29th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2022 ; Conference date: 05-07-2022 Through 08-07-2022",
year = "2022",
doi = "10.23919/AM-FPD54920.2022.9851273",
language = "English",
series = "Proceedings of AM-FPD 2022 - 29th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "78--81",
booktitle = "Proceedings of AM-FPD 2022 - 29th International Workshop on Active-Matrix Flatpanel Displays and Devices",
address = "美國",
}