T-Shaped Gated Poly-Si Thin-Film Transistor Technology for Advanced Logic and RF Applications

Horng Chih Lin*, Cheng Kuei Lee, Po Hsun Yu, Pei Wen Li, Kun Ming Chen, Guo Wei Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this talk we propose a novel T-gate poly-Si TFT process scheme which can be employed for the construction of advanced system-on-panel products. Several unique features, including T-gate, ingenious doping profile, silicided gate/source/drain, and sidewall air spacers, are combined in the fabricated devices and are beneficial for improving device performance. Principles and skills about the self-aligned formation of these structural features are detailed. Potential merits brought about by the proposed scheme with design considerations in source/drain doping profile specifically for logic and RF devices are also revealed and demonstrated.

Original languageEnglish
Title of host publicationProceedings of AM-FPD 2022 - 29th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages78-81
Number of pages4
ISBN (Electronic)9784991216923
DOIs
StatePublished - 2022
Event29th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2022 - Kyoto, Japan
Duration: 5 Jul 20228 Jul 2022

Publication series

NameProceedings of AM-FPD 2022 - 29th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Conference

Conference29th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2022
Country/TerritoryJapan
CityKyoto
Period5/07/228/07/22

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