Symmetric Gate-Overlapped LDD Poly-Si TFTs with Selective and Isotropic Deposited Ni Sub-gate

Bo Ting Chen; Chang Ho Tseng; Huang-Chung Cheng; Chi Wei Chao; Ting Kuo Chang; Jian Hao Lu; Albert Chin

doi:10.1149/1.1635672

Symmetric Gate-Overlapped LDD Poly-Si TFTs with Selective and Isotropic Deposited Ni Sub-gate

Bo Ting Chen^*, Chang Ho Tseng, Huang-Chung Cheng, Chi Wei Chao, Ting Kuo Chang, Jian Hao Lu, Albert Chin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A novel fabrication process for self-aligned gate-overlapped lightly doped drain (SAGOLDD) thin-film transistors (TFTs) using excimer laser irradiation to form the graded LDD dopant profile and selectively plated Ni surrounding-gate to form the gate-overlap is demonstrated. The SAGOLDD TFT device exhibits much lower leakage current, higher on/off current ratio and better hot carrier stress endurance than self-aligned (SA) TFTs due to the lower electric field generated by graded LDD dopant profile.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	2
DOIs	https://doi.org/10.1149/1.1635672
State	Published - 8 Apr 2004

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title = "Symmetric Gate-Overlapped LDD Poly-Si TFTs with Selective and Isotropic Deposited Ni Sub-gate",

abstract = "A novel fabrication process for self-aligned gate-overlapped lightly doped drain (SAGOLDD) thin-film transistors (TFTs) using excimer laser irradiation to form the graded LDD dopant profile and selectively plated Ni surrounding-gate to form the gate-overlap is demonstrated. The SAGOLDD TFT device exhibits much lower leakage current, higher on/off current ratio and better hot carrier stress endurance than self-aligned (SA) TFTs due to the lower electric field generated by graded LDD dopant profile.",

author = "Chen, {Bo Ting} and Tseng, {Chang Ho} and Huang-Chung Cheng and Chao, {Chi Wei} and Chang, {Ting Kuo} and Lu, {Jian Hao} and Albert Chin",

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doi = "10.1149/1.1635672",

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T1 - Symmetric Gate-Overlapped LDD Poly-Si TFTs with Selective and Isotropic Deposited Ni Sub-gate

AU - Chen, Bo Ting

AU - Tseng, Chang Ho

AU - Cheng, Huang-Chung

AU - Chao, Chi Wei

AU - Chang, Ting Kuo

AU - Lu, Jian Hao

AU - Chin, Albert

PY - 2004/4/8

Y1 - 2004/4/8

N2 - A novel fabrication process for self-aligned gate-overlapped lightly doped drain (SAGOLDD) thin-film transistors (TFTs) using excimer laser irradiation to form the graded LDD dopant profile and selectively plated Ni surrounding-gate to form the gate-overlap is demonstrated. The SAGOLDD TFT device exhibits much lower leakage current, higher on/off current ratio and better hot carrier stress endurance than self-aligned (SA) TFTs due to the lower electric field generated by graded LDD dopant profile.

AB - A novel fabrication process for self-aligned gate-overlapped lightly doped drain (SAGOLDD) thin-film transistors (TFTs) using excimer laser irradiation to form the graded LDD dopant profile and selectively plated Ni surrounding-gate to form the gate-overlap is demonstrated. The SAGOLDD TFT device exhibits much lower leakage current, higher on/off current ratio and better hot carrier stress endurance than self-aligned (SA) TFTs due to the lower electric field generated by graded LDD dopant profile.

UR - http://www.scopus.com/inward/record.url?scp=1642601664&partnerID=8YFLogxK

U2 - 10.1149/1.1635672

DO - 10.1149/1.1635672

M3 - Article

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SN - 1099-0062

VL - 7

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Symmetric Gate-Overlapped LDD Poly-Si TFTs with Selective and Isotropic Deposited Ni Sub-gate

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