Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

Chun Yang Huang, Chung Yu Huang, Tsung Ling Tsai, Chun An Lin, Tseung-Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

75 Scopus citations

Abstract

In this Letter, the mechanism of double forming process phenomenon revealing in ZrO2/HfO2 bilayer resistive random access memory structure is investigated. This phenomenon caused by the formation of TiON interfacial layer can be well explained by using the energy band diagram. The TiON interfacial layer will be a tunneling barrier during the first forming process when a negative voltage applied on the device, while it will breakdown when applying a positive voltage. Besides, due to the double forming process, an asymmetric conductive filament with narrower size at ZrO2/HfO2 interface is formed in the device. The point for formation and rupture of the conductive filament can be confined at the ZrO2/HfO2 interface, and it will suppress the consumption of oxygen ions during endurance test. Therefore, high speed (40 ns) and large endurance (107 cycles) characteristics are achieved in this device structure.

Original languageEnglish
Article number062901
JournalApplied Physics Letters
Volume104
Issue number6
DOIs
StatePublished - 2 Oct 2014

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