Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device

F. M. Simanjuntak; S. Chandrasekaran; F. Gapsari; Tseung-Yuen Tseng

doi:10.1088/1757-899X/494/1/012027

Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device

F. M. Simanjuntak^*, S. Chandrasekaran, F. Gapsari, Tseung-Yuen Tseng

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

This paper reports the resistive switching and synaptic capability of AZO/ZnO/ITO transparent and flexiblevalence change memory device structure. The device performs stable endurance for more than 50 cycles with sufficient ON/OFF ratio of one order of magnitude; no intermediate state (data error) is observed during the cycle-to-cycle test. By exploiting the analog switching characteristic of the device and employing identical pulses to the top electrode, a synaptic behavior can be achieved. A low programming voltage of 1.5V is used to modulate the conductance during potentiation and depression which indicate that the device is a logic-compatible. The conduction mechanism during the switching processand the device performance is discussed.

Original language	English
Article number	012027
Journal	IOP Conference Series: Materials Science and Engineering
Volume	494
Issue number	1
DOIs	https://doi.org/10.1088/1757-899X/494/1/012027
State	Published - 29 Mar 2019
Event	International Conference on Mechanical Engineering Research and Application 2018, ICOMERA 2018 - Malang, Indonesia Duration: 23 Oct 2018 → 25 Oct 2018

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title = "Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device",

abstract = "This paper reports the resistive switching and synaptic capability of AZO/ZnO/ITO transparent and flexiblevalence change memory device structure. The device performs stable endurance for more than 50 cycles with sufficient ON/OFF ratio of one order of magnitude; no intermediate state (data error) is observed during the cycle-to-cycle test. By exploiting the analog switching characteristic of the device and employing identical pulses to the top electrode, a synaptic behavior can be achieved. A low programming voltage of 1.5V is used to modulate the conductance during potentiation and depression which indicate that the device is a logic-compatible. The conduction mechanism during the switching processand the device performance is discussed.",

author = "Simanjuntak, {F. M.} and S. Chandrasekaran and F. Gapsari and Tseung-Yuen Tseng",

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T1 - Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device

AU - Simanjuntak, F. M.

AU - Chandrasekaran, S.

AU - Gapsari, F.

AU - Tseng, Tseung-Yuen

PY - 2019/3/29

Y1 - 2019/3/29

N2 - This paper reports the resistive switching and synaptic capability of AZO/ZnO/ITO transparent and flexiblevalence change memory device structure. The device performs stable endurance for more than 50 cycles with sufficient ON/OFF ratio of one order of magnitude; no intermediate state (data error) is observed during the cycle-to-cycle test. By exploiting the analog switching characteristic of the device and employing identical pulses to the top electrode, a synaptic behavior can be achieved. A low programming voltage of 1.5V is used to modulate the conductance during potentiation and depression which indicate that the device is a logic-compatible. The conduction mechanism during the switching processand the device performance is discussed.

AB - This paper reports the resistive switching and synaptic capability of AZO/ZnO/ITO transparent and flexiblevalence change memory device structure. The device performs stable endurance for more than 50 cycles with sufficient ON/OFF ratio of one order of magnitude; no intermediate state (data error) is observed during the cycle-to-cycle test. By exploiting the analog switching characteristic of the device and employing identical pulses to the top electrode, a synaptic behavior can be achieved. A low programming voltage of 1.5V is used to modulate the conductance during potentiation and depression which indicate that the device is a logic-compatible. The conduction mechanism during the switching processand the device performance is discussed.

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U2 - 10.1088/1757-899X/494/1/012027

DO - 10.1088/1757-899X/494/1/012027

M3 - Conference article

AN - SCOPUS:85064858230

SN - 1757-8981

VL - 494

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

IS - 1

M1 - 012027

Y2 - 23 October 2018 through 25 October 2018

ER -

Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device

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