Sweeping-rate-dependent photocurrent of GaAs Schottky diode with strain relaxed InAs quantum dots

Jia Feng Wang; Cheng Lu Lin; Sheng Shiang Pan; Ch-Hpin Huang; Chao Sheng Hsieh; Jenn-Fang Chen

doi:10.7567/JJAP.54.04DF04

Sweeping-rate-dependent photocurrent of GaAs Schottky diode with strain relaxed InAs quantum dots

Jia Feng Wang^*, Cheng Lu Lin, Sheng Shiang Pan, Ch-Hpin Huang, Chao Sheng Hsieh, Jenn-Fang Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate that the photocurrent of a GaAs Schottky diode can be influenced by the carrier stored in strain relaxed InAs quantum dots (QDs) embedded in the Schottky diode. A potential drop is induced by the charged QDs, and the photocurrent generated from the Schottky diode can be suppressed by the induced potential drop. In this paper, the charging time of the relaxed InAs QDs is obtained from 0.1 to 10 s. So the variation in photocurrent can be detected, if the sweeping rate of applied bias is from 10 to 0.1V/s. Two kinds of QD samples, relaxed and non-relaxed InAs QDs, are compared, and we found that the photocurrent is obviously influenced in the relaxed InAs QD sample. A equivalent RC circuit modal also is provided to analyze the formula of the photocurrent, and the analysis agrees with the results of measurements. This study is advantageous for the investigation of QD memory devices.

Original language	English
Article number	04DF04
Journal	Japanese journal of applied physics
Volume	54
Issue number	4
DOIs	https://doi.org/10.7567/JJAP.54.04DF04
State	Published - 1 Apr 2015

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title = "Sweeping-rate-dependent photocurrent of GaAs Schottky diode with strain relaxed InAs quantum dots",

abstract = "We demonstrate that the photocurrent of a GaAs Schottky diode can be influenced by the carrier stored in strain relaxed InAs quantum dots (QDs) embedded in the Schottky diode. A potential drop is induced by the charged QDs, and the photocurrent generated from the Schottky diode can be suppressed by the induced potential drop. In this paper, the charging time of the relaxed InAs QDs is obtained from 0.1 to 10 s. So the variation in photocurrent can be detected, if the sweeping rate of applied bias is from 10 to 0.1V/s. Two kinds of QD samples, relaxed and non-relaxed InAs QDs, are compared, and we found that the photocurrent is obviously influenced in the relaxed InAs QD sample. A equivalent RC circuit modal also is provided to analyze the formula of the photocurrent, and the analysis agrees with the results of measurements. This study is advantageous for the investigation of QD memory devices.",

author = "Wang, {Jia Feng} and Lin, {Cheng Lu} and Pan, {Sheng Shiang} and Ch-Hpin Huang and Hsieh, {Chao Sheng} and Jenn-Fang Chen",

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T1 - Sweeping-rate-dependent photocurrent of GaAs Schottky diode with strain relaxed InAs quantum dots

AU - Wang, Jia Feng

AU - Lin, Cheng Lu

AU - Pan, Sheng Shiang

AU - Huang, Ch-Hpin

AU - Hsieh, Chao Sheng

AU - Chen, Jenn-Fang

PY - 2015/4/1

Y1 - 2015/4/1

N2 - We demonstrate that the photocurrent of a GaAs Schottky diode can be influenced by the carrier stored in strain relaxed InAs quantum dots (QDs) embedded in the Schottky diode. A potential drop is induced by the charged QDs, and the photocurrent generated from the Schottky diode can be suppressed by the induced potential drop. In this paper, the charging time of the relaxed InAs QDs is obtained from 0.1 to 10 s. So the variation in photocurrent can be detected, if the sweeping rate of applied bias is from 10 to 0.1V/s. Two kinds of QD samples, relaxed and non-relaxed InAs QDs, are compared, and we found that the photocurrent is obviously influenced in the relaxed InAs QD sample. A equivalent RC circuit modal also is provided to analyze the formula of the photocurrent, and the analysis agrees with the results of measurements. This study is advantageous for the investigation of QD memory devices.

AB - We demonstrate that the photocurrent of a GaAs Schottky diode can be influenced by the carrier stored in strain relaxed InAs quantum dots (QDs) embedded in the Schottky diode. A potential drop is induced by the charged QDs, and the photocurrent generated from the Schottky diode can be suppressed by the induced potential drop. In this paper, the charging time of the relaxed InAs QDs is obtained from 0.1 to 10 s. So the variation in photocurrent can be detected, if the sweeping rate of applied bias is from 10 to 0.1V/s. Two kinds of QD samples, relaxed and non-relaxed InAs QDs, are compared, and we found that the photocurrent is obviously influenced in the relaxed InAs QD sample. A equivalent RC circuit modal also is provided to analyze the formula of the photocurrent, and the analysis agrees with the results of measurements. This study is advantageous for the investigation of QD memory devices.

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SN - 0021-4922

VL - 54

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 4

M1 - 04DF04

ER -

Sweeping-rate-dependent photocurrent of GaAs Schottky diode with strain relaxed InAs quantum dots

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