Suspended Diamond-Shaped Nanowire with Four {111} Facets for High-Performance Ge Gate-All-Around FETs

Fu Ju Hou; Po Jung Sung; Fu Kuo Hsueh; Chien Ting Wu; Yao Jen Lee; Yi-Ming Li; Seiji Samukawa; Tuo-Hung Hou

doi:10.1109/TED.2016.2597317

Suspended Diamond-Shaped Nanowire with Four {111} Facets for High-Performance Ge Gate-All-Around FETs

Fu Ju Hou, Po Jung Sung, Fu Kuo Hsueh, Chien Ting Wu, Yao Jen Lee^*, Yi-Ming Li, Seiji Samukawa, Tuo-Hung Hou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A feasible pathway to scale germanium (Ge) FETs in future technology nodes has been proposed using the tunable diamond-shaped Ge nanowire (NW). The Ge NW was obtained through a simple top-down dry etching and blanket Ge epitaxy techniques readily available in mass production. The different etching selectivity of surface orientations for Cl₂ and HBr was employed for the three-step isotropic/anisotropic/isotropic dry etching. The ratio of Cl₂ and HBr, mask width, and Ge recess depth were crucial for forming the nearly defect-free suspended Ge channel through effective removal of dislocations near the Si/Ge interface. This technique could also be applied for forming diamond-shaped Si NWs. The suspended diamond-shaped NW gate-all-around NWFETs feature excellent electrostatics, the favorable {111} surfaces along the {110} direction with high carrier mobility, and the nearly defect-free Ge channel. The pFET with a high I_ON/I_OFF ratio of 6 × 10⁷ and promising nFET performance have been demonstrated successfully.

Original language	English
Article number	7542120
Pages (from-to)	3837-3843
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	10
DOIs	https://doi.org/10.1109/TED.2016.2597317
State	Published - 1 Oct 2016

Keywords

gate-all-around (GAA)
germanium (Ge)
isotropic/anisotropic etching
nanowire (NW)
{111}

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10.1109/TED.2016.2597317

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title = "Suspended Diamond-Shaped Nanowire with Four {111} Facets for High-Performance Ge Gate-All-Around FETs",

abstract = "A feasible pathway to scale germanium (Ge) FETs in future technology nodes has been proposed using the tunable diamond-shaped Ge nanowire (NW). The Ge NW was obtained through a simple top-down dry etching and blanket Ge epitaxy techniques readily available in mass production. The different etching selectivity of surface orientations for Cl2 and HBr was employed for the three-step isotropic/anisotropic/isotropic dry etching. The ratio of Cl2 and HBr, mask width, and Ge recess depth were crucial for forming the nearly defect-free suspended Ge channel through effective removal of dislocations near the Si/Ge interface. This technique could also be applied for forming diamond-shaped Si NWs. The suspended diamond-shaped NW gate-all-around NWFETs feature excellent electrostatics, the favorable {111} surfaces along the {110} direction with high carrier mobility, and the nearly defect-free Ge channel. The pFET with a high ION/IOFF ratio of 6 × 107 and promising nFET performance have been demonstrated successfully.",

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author = "Hou, {Fu Ju} and Sung, {Po Jung} and Hsueh, {Fu Kuo} and Wu, {Chien Ting} and Lee, {Yao Jen} and Yi-Ming Li and Seiji Samukawa and Tuo-Hung Hou",

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AU - Hou, Fu Ju

AU - Sung, Po Jung

AU - Hsueh, Fu Kuo

AU - Wu, Chien Ting

AU - Lee, Yao Jen

AU - Li, Yi-Ming

AU - Samukawa, Seiji

AU - Hou, Tuo-Hung

PY - 2016/10/1

Y1 - 2016/10/1

N2 - A feasible pathway to scale germanium (Ge) FETs in future technology nodes has been proposed using the tunable diamond-shaped Ge nanowire (NW). The Ge NW was obtained through a simple top-down dry etching and blanket Ge epitaxy techniques readily available in mass production. The different etching selectivity of surface orientations for Cl2 and HBr was employed for the three-step isotropic/anisotropic/isotropic dry etching. The ratio of Cl2 and HBr, mask width, and Ge recess depth were crucial for forming the nearly defect-free suspended Ge channel through effective removal of dislocations near the Si/Ge interface. This technique could also be applied for forming diamond-shaped Si NWs. The suspended diamond-shaped NW gate-all-around NWFETs feature excellent electrostatics, the favorable {111} surfaces along the {110} direction with high carrier mobility, and the nearly defect-free Ge channel. The pFET with a high ION/IOFF ratio of 6 × 107 and promising nFET performance have been demonstrated successfully.

AB - A feasible pathway to scale germanium (Ge) FETs in future technology nodes has been proposed using the tunable diamond-shaped Ge nanowire (NW). The Ge NW was obtained through a simple top-down dry etching and blanket Ge epitaxy techniques readily available in mass production. The different etching selectivity of surface orientations for Cl2 and HBr was employed for the three-step isotropic/anisotropic/isotropic dry etching. The ratio of Cl2 and HBr, mask width, and Ge recess depth were crucial for forming the nearly defect-free suspended Ge channel through effective removal of dislocations near the Si/Ge interface. This technique could also be applied for forming diamond-shaped Si NWs. The suspended diamond-shaped NW gate-all-around NWFETs feature excellent electrostatics, the favorable {111} surfaces along the {110} direction with high carrier mobility, and the nearly defect-free Ge channel. The pFET with a high ION/IOFF ratio of 6 × 107 and promising nFET performance have been demonstrated successfully.

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KW - germanium (Ge)

KW - isotropic/anisotropic etching

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Suspended Diamond-Shaped Nanowire with Four {111} Facets for High-Performance Ge Gate-All-Around FETs

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