Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence

J. S. Liang; Y. S. Huang; C. W. Tien; Y. M. Chang; C. W. Chen; N. Y. Li; Pei-Wen Li; Fred H. Pollak

doi:10.1063/1.1418027

Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence

J. S. Liang^*, Y. S. Huang, C. W. Tien, Y. M. Chang, C. W. Chen, N. Y. Li, Pei-Wen Li, Fred H. Pollak

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

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Abstract

An angle-dependent surface photovoltage spectroscopy (SPS) study has been performed at room temperature on a GaAs/GaAlAs-based vertical-cavity-surface-emitting-laser (VCSEL) structure emitting at a wavelength near 850 nm. For comparison purposes, we have also measured the angle-dependent reflectance (R). The surface photovoltage spectra exhibit both the fundamental conduction to heavy-hole (1C-1H) excitonic transition and cavity mode plus additional interference features related to the properties of the mirror stacks, whereas in the R spectra only the cavity mode and interference features are clearly visible. The energy position of the excitonic feature is not dependent on the angle of incidence, in contrast to that of the cavity mode, whose angular dependence can be fitted with a simple model. This study demonstrates the considerable potential of angle-dependent SPS for the contactless and nondestructive characterization of VCSEL structures at room temperature.

Original language	English
Pages (from-to)	3227-3229
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	20
DOIs	https://doi.org/10.1063/1.1418027
State	Published - 12 Nov 2001

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title = "Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence",

abstract = "An angle-dependent surface photovoltage spectroscopy (SPS) study has been performed at room temperature on a GaAs/GaAlAs-based vertical-cavity-surface-emitting-laser (VCSEL) structure emitting at a wavelength near 850 nm. For comparison purposes, we have also measured the angle-dependent reflectance (R). The surface photovoltage spectra exhibit both the fundamental conduction to heavy-hole (1C-1H) excitonic transition and cavity mode plus additional interference features related to the properties of the mirror stacks, whereas in the R spectra only the cavity mode and interference features are clearly visible. The energy position of the excitonic feature is not dependent on the angle of incidence, in contrast to that of the cavity mode, whose angular dependence can be fitted with a simple model. This study demonstrates the considerable potential of angle-dependent SPS for the contactless and nondestructive characterization of VCSEL structures at room temperature.",

author = "Liang, {J. S.} and Huang, {Y. S.} and Tien, {C. W.} and Chang, {Y. M.} and Chen, {C. W.} and Li, {N. Y.} and Pei-Wen Li and Pollak, {Fred H.}",

year = "2001",

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doi = "10.1063/1.1418027",

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volume = "79",

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journal = "Applied Physics Letters",

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T1 - Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure

T2 - Angle dependence

AU - Liang, J. S.

AU - Huang, Y. S.

AU - Tien, C. W.

AU - Chang, Y. M.

AU - Chen, C. W.

AU - Li, N. Y.

AU - Li, Pei-Wen

AU - Pollak, Fred H.

PY - 2001/11/12

Y1 - 2001/11/12

N2 - An angle-dependent surface photovoltage spectroscopy (SPS) study has been performed at room temperature on a GaAs/GaAlAs-based vertical-cavity-surface-emitting-laser (VCSEL) structure emitting at a wavelength near 850 nm. For comparison purposes, we have also measured the angle-dependent reflectance (R). The surface photovoltage spectra exhibit both the fundamental conduction to heavy-hole (1C-1H) excitonic transition and cavity mode plus additional interference features related to the properties of the mirror stacks, whereas in the R spectra only the cavity mode and interference features are clearly visible. The energy position of the excitonic feature is not dependent on the angle of incidence, in contrast to that of the cavity mode, whose angular dependence can be fitted with a simple model. This study demonstrates the considerable potential of angle-dependent SPS for the contactless and nondestructive characterization of VCSEL structures at room temperature.

AB - An angle-dependent surface photovoltage spectroscopy (SPS) study has been performed at room temperature on a GaAs/GaAlAs-based vertical-cavity-surface-emitting-laser (VCSEL) structure emitting at a wavelength near 850 nm. For comparison purposes, we have also measured the angle-dependent reflectance (R). The surface photovoltage spectra exhibit both the fundamental conduction to heavy-hole (1C-1H) excitonic transition and cavity mode plus additional interference features related to the properties of the mirror stacks, whereas in the R spectra only the cavity mode and interference features are clearly visible. The energy position of the excitonic feature is not dependent on the angle of incidence, in contrast to that of the cavity mode, whose angular dependence can be fitted with a simple model. This study demonstrates the considerable potential of angle-dependent SPS for the contactless and nondestructive characterization of VCSEL structures at room temperature.

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U2 - 10.1063/1.1418027

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VL - 79

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EP - 3229

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence

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