Surface modification on hydrophilicity enhancement using NH4OH, NaOH, and KOH on fine-pitch low-temperature Cu/SiO2Hybrid Bonding

Jia Juen Ong; Dinh Phuc Tran; Wei Lan Chiu; Yu An Chen; Ou Hsiang Lee; Hsiang Hung Chang; Chih Chen

doi:10.1109/ECTC51909.2023.00263

Surface modification on hydrophilicity enhancement using NH₄OH, NaOH, and KOH on fine-pitch low-temperature Cu/SiO₂Hybrid Bonding

Jia Juen Ong, Dinh Phuc Tran, Wei Lan Chiu, Yu An Chen, Ou Hsiang Lee, Hsiang Hung Chang, Chih Chen^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

A novel plasma-free hydrophilicity surface modification treatment on PECVD SiO2 dielectric layer is proposed in this paper. Different alkaline chemicals such as ammonia (NH4OH), sodium hydroxide (NaOH), and potassium hydroxide (KOH) are used as pretreatment solutions. By using this pretreatment prior to the bonding process, we found the contact angle of water decreased significantly. Cu etching issue is further discussed while no serious variation in surface roughness of Cu after KOH and NaOH pretreatment. Cross-sectional HR TEM shows excellent bonding quality and no contamination signal of residual pretreatment solution detected by TEM-EDS. Low specific contact resistivity of 10-8 O/cm2 was detected at kelvin structure.

Original language	English
Title of host publication	Proceedings - IEEE 73rd Electronic Components and Technology Conference, ECTC 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1549-1552
Number of pages	4
ISBN (Electronic)	9798350334982
DOIs	https://doi.org/10.1109/ECTC51909.2023.00263
State	Published - 2023
Event	73rd IEEE Electronic Components and Technology Conference, ECTC 2023 - Orlando, United States Duration: 30 May 2023 → 2 Jun 2023

Publication series

Name	Proceedings - Electronic Components and Technology Conference
Volume	2023-May
ISSN (Print)	0569-5503

Conference

Conference	73rd IEEE Electronic Components and Technology Conference, ECTC 2023
Country/Territory	United States
City	Orlando
Period	30/05/23 → 2/06/23

Keywords

Heterogeneous Integration
interfacial analysis
low-temperature Cu/SiOhybrid bonding
surface modification

Access to Document

10.1109/ECTC51909.2023.00263

Cite this

Ong, J. J., Tran, D. P., Chiu, W. L., Chen, Y. A., Lee, O. H., Chang, H. H., & Chen, C. (2023). Surface modification on hydrophilicity enhancement using NH₄OH, NaOH, and KOH on fine-pitch low-temperature Cu/SiO₂Hybrid Bonding. In Proceedings - IEEE 73rd Electronic Components and Technology Conference, ECTC 2023 (pp. 1549-1552). (Proceedings - Electronic Components and Technology Conference; Vol. 2023-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC51909.2023.00263

Ong, Jia Juen ; Tran, Dinh Phuc ; Chiu, Wei Lan et al. / Surface modification on hydrophilicity enhancement using NH₄OH, NaOH, and KOH on fine-pitch low-temperature Cu/SiO₂Hybrid Bonding. Proceedings - IEEE 73rd Electronic Components and Technology Conference, ECTC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. pp. 1549-1552 (Proceedings - Electronic Components and Technology Conference).

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title = "Surface modification on hydrophilicity enhancement using NH4OH, NaOH, and KOH on fine-pitch low-temperature Cu/SiO2Hybrid Bonding",

abstract = "A novel plasma-free hydrophilicity surface modification treatment on PECVD SiO2 dielectric layer is proposed in this paper. Different alkaline chemicals such as ammonia (NH4OH), sodium hydroxide (NaOH), and potassium hydroxide (KOH) are used as pretreatment solutions. By using this pretreatment prior to the bonding process, we found the contact angle of water decreased significantly. Cu etching issue is further discussed while no serious variation in surface roughness of Cu after KOH and NaOH pretreatment. Cross-sectional HR TEM shows excellent bonding quality and no contamination signal of residual pretreatment solution detected by TEM-EDS. Low specific contact resistivity of 10-8 O/cm2 was detected at kelvin structure.",

keywords = "Heterogeneous Integration, interfacial analysis, low-temperature Cu/SiOhybrid bonding, surface modification",

author = "Ong, {Jia Juen} and Tran, {Dinh Phuc} and Chiu, {Wei Lan} and Chen, {Yu An} and Lee, {Ou Hsiang} and Chang, {Hsiang Hung} and Chih Chen",

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year = "2023",

doi = "10.1109/ECTC51909.2023.00263",

language = "English",

series = "Proceedings - Electronic Components and Technology Conference",

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Ong, JJ, Tran, DP, Chiu, WL, Chen, YA, Lee, OH, Chang, HH & Chen, C 2023, Surface modification on hydrophilicity enhancement using NH₄OH, NaOH, and KOH on fine-pitch low-temperature Cu/SiO₂Hybrid Bonding. in Proceedings - IEEE 73rd Electronic Components and Technology Conference, ECTC 2023. Proceedings - Electronic Components and Technology Conference, vol. 2023-May, Institute of Electrical and Electronics Engineers Inc., pp. 1549-1552, 73rd IEEE Electronic Components and Technology Conference, ECTC 2023, Orlando, United States, 30/05/23. https://doi.org/10.1109/ECTC51909.2023.00263

Surface modification on hydrophilicity enhancement using NH₄OH, NaOH, and KOH on fine-pitch low-temperature Cu/SiO₂Hybrid Bonding. / Ong, Jia Juen; Tran, Dinh Phuc; Chiu, Wei Lan et al.
Proceedings - IEEE 73rd Electronic Components and Technology Conference, ECTC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 1549-1552 (Proceedings - Electronic Components and Technology Conference; Vol. 2023-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - A novel plasma-free hydrophilicity surface modification treatment on PECVD SiO2 dielectric layer is proposed in this paper. Different alkaline chemicals such as ammonia (NH4OH), sodium hydroxide (NaOH), and potassium hydroxide (KOH) are used as pretreatment solutions. By using this pretreatment prior to the bonding process, we found the contact angle of water decreased significantly. Cu etching issue is further discussed while no serious variation in surface roughness of Cu after KOH and NaOH pretreatment. Cross-sectional HR TEM shows excellent bonding quality and no contamination signal of residual pretreatment solution detected by TEM-EDS. Low specific contact resistivity of 10-8 O/cm2 was detected at kelvin structure.

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Ong JJ, Tran DP, Chiu WL, Chen YA, Lee OH, Chang HH et al. Surface modification on hydrophilicity enhancement using NH₄OH, NaOH, and KOH on fine-pitch low-temperature Cu/SiO₂Hybrid Bonding. In Proceedings - IEEE 73rd Electronic Components and Technology Conference, ECTC 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 1549-1552. (Proceedings - Electronic Components and Technology Conference). doi: 10.1109/ECTC51909.2023.00263