TY - GEN
T1 - Surface Modification by Wet Treatment for Low-Temperature Cu/SiO2 Hybrid Bonding
AU - Chen, Yu An
AU - Ong, Jia Juen
AU - Chiu, Wei Lan
AU - Chang, Hsiang Hung
AU - Chen, Chih
N1 - Publisher Copyright:
© 2024 Japan Institute of Electronics Packaging.
PY - 2024
Y1 - 2024
N2 - Based on the surface analyses and bonding results, we concluded that the optimal wet surface modification solution are 0.5 M for both NaOH and KOH, which not only achieve sufficient hydrophilicity for bonding but also have the least roughening on the sample surface. Utilizing this treatment, we achieved robust Cu/SiO2 hybrid bonding with no noticeable gaps at the bonding interfaces at 200°C without pressure. A very low specific contact resistance of 3.4×10-9 Ω/cm2 can be obtained using the optimal wet treatment conditions.
AB - Based on the surface analyses and bonding results, we concluded that the optimal wet surface modification solution are 0.5 M for both NaOH and KOH, which not only achieve sufficient hydrophilicity for bonding but also have the least roughening on the sample surface. Utilizing this treatment, we achieved robust Cu/SiO2 hybrid bonding with no noticeable gaps at the bonding interfaces at 200°C without pressure. A very low specific contact resistance of 3.4×10-9 Ω/cm2 can be obtained using the optimal wet treatment conditions.
KW - 3D IC integration
KW - Cu/SiO hybrid bonding
KW - Interfacial analysis
KW - Low temperature bonding
KW - Surface modification
UR - https://www.scopus.com/pages/publications/85195485246
U2 - 10.23919/ICEP61562.2024.10535588
DO - 10.23919/ICEP61562.2024.10535588
M3 - Conference contribution
AN - SCOPUS:85195485246
T3 - 2024 International Conference on Electronics Packaging, ICEP 2024
SP - 115
EP - 116
BT - 2024 International Conference on Electronics Packaging, ICEP 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 23rd International Conference on Electronics Packaging, ICEP 2024
Y2 - 17 April 2024 through 20 April 2024
ER -