Suppression of the floating-body effect in poly-Si thin-film transistors with self-aligned Schottky barrier source and ohmic body contact structure

Po Yi Kuo; Tien-Sheng Chao; Tan Fu Lei

doi:10.1109/LED.2004.834635

Suppression of the floating-body effect in poly-Si thin-film transistors with self-aligned Schottky barrier source and ohmic body contact structure

Po Yi Kuo^*, Tien-Sheng Chao, Tan Fu Lei

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

Abstract

In this letter, we developed a new self-aligned Schottky barrier source and ohmic body contact (SSOB) method that can effectively suppress the floating-body effect in poly-Si thin-film transistors (TFTs). Experimental results show that the SSOB-TFTs give higher output resistance, less threshold voltage variation, improved subthreshold characteristics, and larger breakdown voltage compared with conventional TFTs. The characteristics of the SSOB-TFTs are suitable for high-performance driving TFTs with a high output resistance and large breakdown voltage.

Original language	English
Pages (from-to)	634-636
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	25
Issue number	9
DOIs	https://doi.org/10.1109/LED.2004.834635
State	Published - 1 Sep 2004

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abstract = "In this letter, we developed a new self-aligned Schottky barrier source and ohmic body contact (SSOB) method that can effectively suppress the floating-body effect in poly-Si thin-film transistors (TFTs). Experimental results show that the SSOB-TFTs give higher output resistance, less threshold voltage variation, improved subthreshold characteristics, and larger breakdown voltage compared with conventional TFTs. The characteristics of the SSOB-TFTs are suitable for high-performance driving TFTs with a high output resistance and large breakdown voltage.",

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AB - In this letter, we developed a new self-aligned Schottky barrier source and ohmic body contact (SSOB) method that can effectively suppress the floating-body effect in poly-Si thin-film transistors (TFTs). Experimental results show that the SSOB-TFTs give higher output resistance, less threshold voltage variation, improved subthreshold characteristics, and larger breakdown voltage compared with conventional TFTs. The characteristics of the SSOB-TFTs are suitable for high-performance driving TFTs with a high output resistance and large breakdown voltage.

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Suppression of the floating-body effect in poly-Si thin-film transistors with self-aligned Schottky barrier source and ohmic body contact structure

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