Suppression of random-dopant-induced characteristic fluctuation in 16 nm MOSFET devices using dual-material gate

Chun Yen Yiu; Yong Yue Ciou; Ru Wei Chang; Kuo Fu Lee; Hui Wen Cheng; Yiming Li

doi:10.1109/ISNE.2010.5669139

Suppression of random-dopant-induced characteristic fluctuation in 16 nm MOSFET devices using dual-material gate

Chun Yen Yiu, Yong Yue Ciou, Ru Wei Chang, Kuo Fu Lee, Hui Wen Cheng, Yiming Li^*

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, we for the first time explore the dual material gate (DMG) and inverse DMG devices for suppressing random dopant fluctuation (RDF)-induced characteristics fluctuation in 16-nm MOSFET devices. The physical mechanism of DMG devices to suppress RDF are investigated and discussed. The improvement ofDMG for suppressing the RDF-induced Vth, Ion, and Ioff fluctuation are 28%,12.3%, and 59%, respectively.

Original language	English
Title of host publication	2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program
Pages	28-31
Number of pages	4
DOIs	https://doi.org/10.1109/ISNE.2010.5669139
State	Published - 2010
Event	2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Kaohsiung, Taiwan Duration: 18 Nov 2010 → 19 Nov 2010

Publication series

Name	2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program

Conference

Conference	2010 International Symposium on Next-Generation Electronics, ISNE 2010
Country/Territory	Taiwan
City	Kaohsiung
Period	18/11/10 → 19/11/10

Keywords

Dual material gate
Potential barriers
Random dopant fluctuatio
Work function

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10.1109/ISNE.2010.5669139

Cite this

Yiu, C. Y., Ciou, Y. Y., Chang, R. W., Lee, K. F., Cheng, H. W., & Li, Y. (2010). Suppression of random-dopant-induced characteristic fluctuation in 16 nm MOSFET devices using dual-material gate. In 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program (pp. 28-31). Article 5669139 (2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program). https://doi.org/10.1109/ISNE.2010.5669139

Yiu, Chun Yen ; Ciou, Yong Yue ; Chang, Ru Wei et al. / Suppression of random-dopant-induced characteristic fluctuation in 16 nm MOSFET devices using dual-material gate. 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program. 2010. pp. 28-31 (2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program).

@inproceedings{c26ca0de5efd4492b988fba8d4754c4b,

title = "Suppression of random-dopant-induced characteristic fluctuation in 16 nm MOSFET devices using dual-material gate",

abstract = "In this work, we for the first time explore the dual material gate (DMG) and inverse DMG devices for suppressing random dopant fluctuation (RDF)-induced characteristics fluctuation in 16-nm MOSFET devices. The physical mechanism of DMG devices to suppress RDF are investigated and discussed. The improvement ofDMG for suppressing the RDF-induced Vth, Ion, and Ioff fluctuation are 28%,12.3%, and 59%, respectively.",

keywords = "Dual material gate, Potential barriers, Random dopant fluctuatio, Work function",

author = "Yiu, {Chun Yen} and Ciou, {Yong Yue} and Chang, {Ru Wei} and Lee, {Kuo Fu} and Cheng, {Hui Wen} and Yiming Li",

year = "2010",

doi = "10.1109/ISNE.2010.5669139",

language = "English",

isbn = "9781424466948",

series = "2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program",

pages = "28--31",

booktitle = "2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program",

note = "2010 International Symposium on Next-Generation Electronics, ISNE 2010 ; Conference date: 18-11-2010 Through 19-11-2010",

}

Yiu, CY, Ciou, YY, Chang, RW, Lee, KF, Cheng, HW & Li, Y 2010, Suppression of random-dopant-induced characteristic fluctuation in 16 nm MOSFET devices using dual-material gate. in 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program., 5669139, 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program, pp. 28-31, 2010 International Symposium on Next-Generation Electronics, ISNE 2010, Kaohsiung, Taiwan, 18/11/10. https://doi.org/10.1109/ISNE.2010.5669139

Suppression of random-dopant-induced characteristic fluctuation in 16 nm MOSFET devices using dual-material gate. / Yiu, Chun Yen; Ciou, Yong Yue; Chang, Ru Wei et al.
2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program. 2010. p. 28-31 5669139 (2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Suppression of random-dopant-induced characteristic fluctuation in 16 nm MOSFET devices using dual-material gate

AU - Yiu, Chun Yen

AU - Ciou, Yong Yue

AU - Chang, Ru Wei

AU - Lee, Kuo Fu

AU - Cheng, Hui Wen

AU - Li, Yiming

PY - 2010

Y1 - 2010

N2 - In this work, we for the first time explore the dual material gate (DMG) and inverse DMG devices for suppressing random dopant fluctuation (RDF)-induced characteristics fluctuation in 16-nm MOSFET devices. The physical mechanism of DMG devices to suppress RDF are investigated and discussed. The improvement ofDMG for suppressing the RDF-induced Vth, Ion, and Ioff fluctuation are 28%,12.3%, and 59%, respectively.

AB - In this work, we for the first time explore the dual material gate (DMG) and inverse DMG devices for suppressing random dopant fluctuation (RDF)-induced characteristics fluctuation in 16-nm MOSFET devices. The physical mechanism of DMG devices to suppress RDF are investigated and discussed. The improvement ofDMG for suppressing the RDF-induced Vth, Ion, and Ioff fluctuation are 28%,12.3%, and 59%, respectively.

KW - Dual material gate

KW - Potential barriers

KW - Random dopant fluctuatio

KW - Work function

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U2 - 10.1109/ISNE.2010.5669139

DO - 10.1109/ISNE.2010.5669139

M3 - Conference contribution

AN - SCOPUS:78751524556

SN - 9781424466948

T3 - 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program

SP - 28

EP - 31

BT - 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program

T2 - 2010 International Symposium on Next-Generation Electronics, ISNE 2010

Y2 - 18 November 2010 through 19 November 2010

ER -

Yiu CY, Ciou YY, Chang RW, Lee KF, Cheng HW, Li Y. Suppression of random-dopant-induced characteristic fluctuation in 16 nm MOSFET devices using dual-material gate. In 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program. 2010. p. 28-31. 5669139. (2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program). doi: 10.1109/ISNE.2010.5669139

Suppression of random-dopant-induced characteristic fluctuation in 16 nm MOSFET devices using dual-material gate

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