Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

Po-Tsun Liu; Chih Hsiang Chang; Chih Jui Chang

doi:10.1063/1.4954978

Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

Po-Tsun Liu^*, Chih Hsiang Chang, Chih Jui Chang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO ₂ backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.

Original language	English
Article number	261603
Number of pages	4
Journal	Applied Physics Letters
Volume	108
Issue number	26
DOIs	https://doi.org/10.1063/1.4954978
State	Published - 27 Jun 2016

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title = "Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure",

abstract = " This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO 2 backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS. ",

author = "Po-Tsun Liu and Chang, {Chih Hsiang} and Chang, {Chih Jui}",

year = "2016",

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doi = "10.1063/1.4954978",

language = "English",

volume = "108",

journal = "Applied Physics Letters",

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T1 - Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

AU - Liu, Po-Tsun

AU - Chang, Chih Hsiang

AU - Chang, Chih Jui

PY - 2016/6/27

Y1 - 2016/6/27

N2 - This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO 2 backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.

AB - This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO 2 backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

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ER -

Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

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