Abstract
The authors report a novel Si-B diffusion source for doping p+-poly-Si gates in pMOSFETs. It is found that B penetration can be effectively suppressed by using this novel process. All of the electrical properties of the MOS capacitors are significantly improved over those in the conventional BF2+ or B+-implanted samples. This new process is very promising for future surface-channel pMOSFETs.
Original language | English |
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Pages (from-to) | 128-129 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 34 |
Issue number | 1 |
DOIs | |
State | Published - 8 Jan 1998 |