Suppression of boron penetration in p+ polysilicon gate using Si-B diffusion source

Tien-Sheng Chao; C. P. Kuo; T. F. Lei; T. P. Chen; T. Y. Huang; C. Y. Chang

doi:10.1049/el:19980061

Suppression of boron penetration in p⁺ polysilicon gate using Si-B diffusion source

Tien-Sheng Chao^*, C. P. Kuo, T. F. Lei, T. P. Chen, T. Y. Huang, C. Y. Chang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The authors report a novel Si-B diffusion source for doping p⁺-poly-Si gates in pMOSFETs. It is found that B penetration can be effectively suppressed by using this novel process. All of the electrical properties of the MOS capacitors are significantly improved over those in the conventional BF₂⁺ or B⁺-implanted samples. This new process is very promising for future surface-channel pMOSFETs.

Original language	English
Pages (from-to)	128-129
Number of pages	2
Journal	Electronics Letters
Volume	34
Issue number	1
DOIs	https://doi.org/10.1049/el:19980061
State	Published - 8 Jan 1998

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abstract = "The authors report a novel Si-B diffusion source for doping p+-poly-Si gates in pMOSFETs. It is found that B penetration can be effectively suppressed by using this novel process. All of the electrical properties of the MOS capacitors are significantly improved over those in the conventional BF2+ or B+-implanted samples. This new process is very promising for future surface-channel pMOSFETs.",

author = "Tien-Sheng Chao and Kuo, {C. P.} and Lei, {T. F.} and Chen, {T. P.} and Huang, {T. Y.} and Chang, {C. Y.}",

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AU - Chao, Tien-Sheng

AU - Kuo, C. P.

AU - Lei, T. F.

AU - Chen, T. P.

AU - Huang, T. Y.

AU - Chang, C. Y.

PY - 1998/1/8

Y1 - 1998/1/8

N2 - The authors report a novel Si-B diffusion source for doping p+-poly-Si gates in pMOSFETs. It is found that B penetration can be effectively suppressed by using this novel process. All of the electrical properties of the MOS capacitors are significantly improved over those in the conventional BF2+ or B+-implanted samples. This new process is very promising for future surface-channel pMOSFETs.

AB - The authors report a novel Si-B diffusion source for doping p+-poly-Si gates in pMOSFETs. It is found that B penetration can be effectively suppressed by using this novel process. All of the electrical properties of the MOS capacitors are significantly improved over those in the conventional BF2+ or B+-implanted samples. This new process is very promising for future surface-channel pMOSFETs.

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M3 - Article

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VL - 34

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JF - Electronics Letters

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Suppression of boron penetration in p⁺ polysilicon gate using Si-B diffusion source

Abstract

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