Suppression of boron penetration in p+ polysilicon gate using Si-B diffusion source

Tien-Sheng Chao*, C. P. Kuo, T. F. Lei, T. P. Chen, T. Y. Huang, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The authors report a novel Si-B diffusion source for doping p+-poly-Si gates in pMOSFETs. It is found that B penetration can be effectively suppressed by using this novel process. All of the electrical properties of the MOS capacitors are significantly improved over those in the conventional BF2+ or B+-implanted samples. This new process is very promising for future surface-channel pMOSFETs.

Original languageEnglish
Pages (from-to)128-129
Number of pages2
JournalElectronics Letters
Volume34
Issue number1
DOIs
StatePublished - 8 Jan 1998

Fingerprint

Dive into the research topics of 'Suppression of boron penetration in p+ polysilicon gate using Si-B diffusion source'. Together they form a unique fingerprint.

Cite this