Suppression of boron penetration in P+-Poly-SiGe Gate P-channel metal-oxide-semiconductor field-effect transistor using NH3-Nitrided and N2O-grown gate oxides

Wen Luh Yang, Tien-Sheng Chao*, Kuan Hung Lai

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

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Physics & Astronomy

Engineering & Materials Science