Suppression of boron penetration in P+-Poly-SiGe Gate P-channel metal-oxide-semiconductor field-effect transistor using NH3-Nitrided and N2O-grown gate oxides

Wen Luh Yang; Tien-Sheng Chao; Kuan Hung Lai

doi:10.1143/JJAP.43.7462

Suppression of boron penetration in P⁺-Poly-SiGe Gate P-channel metal-oxide-semiconductor field-effect transistor using NH₃-Nitrided and N₂O-grown gate oxides

Wen Luh Yang, Tien-Sheng Chao^*, Kuan Hung Lai

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

High-performance p⁺-poly-SiGe-gate p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) have been fabricated using NH₃-nitrided or N₂O-grown oxide instead of the conventional O₂-grown oxide. It is found that NH ₃-nitrided or N₂O-grown oxide can suppress boron penetration in the p⁺-poly-SiGe gate, which improves the integrity of gate dielectrics, resulting in a low flat-band voltage shift, subthreshold swing, and drain-induced barrier lowering.

Original language	English
Pages (from-to)	7462-7463
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	11 A
DOIs	https://doi.org/10.1143/JJAP.43.7462
State	Published - Nov 2004

Keywords

Boron penetration
Flat-band voltage shift
NH
NO
Poly-SiGe

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10.1143/JJAP.43.7462

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title = "Suppression of boron penetration in P+-Poly-SiGe Gate P-channel metal-oxide-semiconductor field-effect transistor using NH3-Nitrided and N2O-grown gate oxides",

abstract = "High-performance p+-poly-SiGe-gate p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) have been fabricated using NH3-nitrided or N2O-grown oxide instead of the conventional O2-grown oxide. It is found that NH 3-nitrided or N2O-grown oxide can suppress boron penetration in the p+-poly-SiGe gate, which improves the integrity of gate dielectrics, resulting in a low flat-band voltage shift, subthreshold swing, and drain-induced barrier lowering.",

keywords = "Boron penetration, Flat-band voltage shift, NH, NO, Poly-SiGe",

author = "Yang, {Wen Luh} and Tien-Sheng Chao and Lai, {Kuan Hung}",

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Suppression of boron penetration in P⁺-Poly-SiGe Gate P-channel metal-oxide-semiconductor field-effect transistor using NH₃-Nitrided and N₂O-grown gate oxides. / Yang, Wen Luh; Chao, Tien-Sheng; Lai, Kuan Hung.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 11 A, 11.2004, p. 7462-7463.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Suppression of boron penetration in P+-Poly-SiGe Gate P-channel metal-oxide-semiconductor field-effect transistor using NH3-Nitrided and N2O-grown gate oxides

AU - Yang, Wen Luh

AU - Chao, Tien-Sheng

AU - Lai, Kuan Hung

PY - 2004/11

Y1 - 2004/11

N2 - High-performance p+-poly-SiGe-gate p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) have been fabricated using NH3-nitrided or N2O-grown oxide instead of the conventional O2-grown oxide. It is found that NH 3-nitrided or N2O-grown oxide can suppress boron penetration in the p+-poly-SiGe gate, which improves the integrity of gate dielectrics, resulting in a low flat-band voltage shift, subthreshold swing, and drain-induced barrier lowering.

AB - High-performance p+-poly-SiGe-gate p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) have been fabricated using NH3-nitrided or N2O-grown oxide instead of the conventional O2-grown oxide. It is found that NH 3-nitrided or N2O-grown oxide can suppress boron penetration in the p+-poly-SiGe gate, which improves the integrity of gate dielectrics, resulting in a low flat-band voltage shift, subthreshold swing, and drain-induced barrier lowering.

KW - Boron penetration

KW - Flat-band voltage shift

KW - NH

KW - NO

KW - Poly-SiGe

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DO - 10.1143/JJAP.43.7462

M3 - Article

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SN - 0021-4922

VL - 43

SP - 7462

EP - 7463

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 11 A

ER -

Suppression of boron penetration in P⁺-Poly-SiGe Gate P-channel metal-oxide-semiconductor field-effect transistor using NH₃-Nitrided and N₂O-grown gate oxides

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Keywords

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