Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation
- Tien-Sheng Chao*
- , Chao-Hsin Chien
- , C. P. Hao
- , M. C. Liaw
- , C. H. Chu
- , C. Y. Chang
- , T. F. Lei
- , W. T. Sun
- , C. H. Hsu
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
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