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Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation
Tien-Sheng Chao*, Chao-Hsin Chien, C. P. Hao, M. C. Liaw, C. H. Chu, C. Y. Chang, T. F. Lei, W. T. Sun, C. H. Hsu
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
12
Scopus
citations