Abstract
The mechanism and the optimization of nitrogen implantation for suppression the boron penetration in p+- poly-Si gate metal-oxide-semiconductor capacitor is reported. This nitrogen co-implantation process exhibits a good suppression of boron penetration and a better electrical characteristic than that of control sample. It was found that nitrogen combines with the boron to form a B-X complex, retarding the penetration of boron itself, was identified by XPS measurements. The optimum nitrogen dosage is also found in this study.
Original language | English |
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Pages (from-to) | 1364-1367 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 36 |
Issue number | 3 SUPPL. B |
DOIs | |
State | Published - Mar 1997 |
Keywords
- Boron penetration
- Nitrogen
- X-ray photoelectron spectroscopy
- pMOSFET