Suppression of boron penetration in BF 2 + -implanted poly-Si gate

Tien-Sheng Chao; Chih Hsun Chu; Chuan Fu Wang; H. O. Kuai Junz; Tan Fu Lei; Chung Len Lee

doi:10.1143/jjap.35.6003

Suppression of boron penetration in BF ₂ ⁺ -implanted poly-Si gate

Tien-Sheng Chao^*, Chih Hsun Chu, Chuan Fu Wang, H. O. Kuai Junz, Tan Fu Lei, Chung Len Lee

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this paper, a comprehensive study of gate engineering to suppress the penetration of boron in p-type metaloxide-semiconductor field-effect transistor (MOSFET) with the p⁺-poly-Si-gate is reported. Four types of poly-Si gate structure, two types of gate dielectrics were investigated to suppress the boron penetration. Among the different gate structures, the stacked amorphous silicon structure was found to be the most effective way to retard the boron penetration. N₂O oxide exhibited a better retarding of the boron diffusion as compared with the O₂ oxide. It was found that a combination of stacked amorphous silicon with N₂O oxide is the most effective way to suppress the boron penetration. Thermal stability, oxide integrity, and D_it of this sample are superior to all the other samples.

Original language	English
Pages (from-to)	6003-6007
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	35
Issue number	12 A
DOIs	https://doi.org/10.1143/jjap.35.6003
State	Published - Dec 1996

Keywords

Boron
NO oxide
Penetration
Stack poly-Si

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title = "Suppression of boron penetration in BF 2 + -implanted poly-Si gate",

abstract = "In this paper, a comprehensive study of gate engineering to suppress the penetration of boron in p-type metaloxide-semiconductor field-effect transistor (MOSFET) with the p+-poly-Si-gate is reported. Four types of poly-Si gate structure, two types of gate dielectrics were investigated to suppress the boron penetration. Among the different gate structures, the stacked amorphous silicon structure was found to be the most effective way to retard the boron penetration. N2O oxide exhibited a better retarding of the boron diffusion as compared with the O2 oxide. It was found that a combination of stacked amorphous silicon with N2O oxide is the most effective way to suppress the boron penetration. Thermal stability, oxide integrity, and Dit of this sample are superior to all the other samples.",

keywords = "Boron, NO oxide, Penetration, Stack poly-Si",

author = "Tien-Sheng Chao and Chu, {Chih Hsun} and Wang, {Chuan Fu} and {Kuai Junz}, {H. O.} and Lei, {Tan Fu} and Lee, {Chung Len}",

year = "1996",

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doi = "10.1143/jjap.35.6003",

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T1 - Suppression of boron penetration in BF 2 + -implanted poly-Si gate

AU - Chao, Tien-Sheng

AU - Chu, Chih Hsun

AU - Wang, Chuan Fu

AU - Kuai Junz, H. O.

AU - Lei, Tan Fu

AU - Lee, Chung Len

PY - 1996/12

Y1 - 1996/12

N2 - In this paper, a comprehensive study of gate engineering to suppress the penetration of boron in p-type metaloxide-semiconductor field-effect transistor (MOSFET) with the p+-poly-Si-gate is reported. Four types of poly-Si gate structure, two types of gate dielectrics were investigated to suppress the boron penetration. Among the different gate structures, the stacked amorphous silicon structure was found to be the most effective way to retard the boron penetration. N2O oxide exhibited a better retarding of the boron diffusion as compared with the O2 oxide. It was found that a combination of stacked amorphous silicon with N2O oxide is the most effective way to suppress the boron penetration. Thermal stability, oxide integrity, and Dit of this sample are superior to all the other samples.

AB - In this paper, a comprehensive study of gate engineering to suppress the penetration of boron in p-type metaloxide-semiconductor field-effect transistor (MOSFET) with the p+-poly-Si-gate is reported. Four types of poly-Si gate structure, two types of gate dielectrics were investigated to suppress the boron penetration. Among the different gate structures, the stacked amorphous silicon structure was found to be the most effective way to retard the boron penetration. N2O oxide exhibited a better retarding of the boron diffusion as compared with the O2 oxide. It was found that a combination of stacked amorphous silicon with N2O oxide is the most effective way to suppress the boron penetration. Thermal stability, oxide integrity, and Dit of this sample are superior to all the other samples.

KW - Boron

KW - NO oxide

KW - Penetration

KW - Stack poly-Si

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DO - 10.1143/jjap.35.6003

M3 - Article

AN - SCOPUS:0030392108

SN - 0021-4922

VL - 35

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EP - 6007

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12 A

ER -

Suppression of boron penetration in BF ₂ ⁺ -implanted poly-Si gate

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Keywords

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