Suppression of boron penetration in BF 2 + -implanted poly-Si gate

Tien-Sheng Chao*, Chih Hsun Chu, Chuan Fu Wang, H. O. Kuai Junz, Tan Fu Lei, Chung Len Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


In this paper, a comprehensive study of gate engineering to suppress the penetration of boron in p-type metaloxide-semiconductor field-effect transistor (MOSFET) with the p+-poly-Si-gate is reported. Four types of poly-Si gate structure, two types of gate dielectrics were investigated to suppress the boron penetration. Among the different gate structures, the stacked amorphous silicon structure was found to be the most effective way to retard the boron penetration. N2O oxide exhibited a better retarding of the boron diffusion as compared with the O2 oxide. It was found that a combination of stacked amorphous silicon with N2O oxide is the most effective way to suppress the boron penetration. Thermal stability, oxide integrity, and Dit of this sample are superior to all the other samples.

Original languageEnglish
Pages (from-to)6003-6007
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number12 A
StatePublished - Dec 1996


  • Boron
  • NO oxide
  • Penetration
  • Stack poly-Si


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