Abstract
The current voltage characteristics of short-channel nMOSFET in the subthreshold region are investigated by two-dimensional numerical analysis. Deep ion implantation of acceptor impurities beneath the channel is found to improve these characteristics. Structure optimization for the deeply ion-implanted short-channel MOSFET is carried out to obtain low subthreshold current with steep semilogarithmic slope, which is almost comparable with the long-channel MOSFET.
Original language | English |
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Pages (from-to) | 27-33 |
Number of pages | 7 |
Journal | Japanese Journal of Applied Physics |
Volume | 18 |
Issue number | S1 |
DOIs | |
State | Published - 1980 |
Event | Proc Conf Solid State Devices 10th - Tokyo, Jpn Duration: 29 Aug 1978 → 30 Aug 1978 |