Suppressing the leakage on ain gate dielectrics and its application on low-voltage organic thin-film transistors

Hsiao-Wen Zan; Kuo Hsi Yen; Chien Hsun Chen; Pu Kuan Liu; O. Hsin Ku; Jennchang Hwang

Suppressing the leakage on ain gate dielectrics and its application on low-voltage organic thin-film transistors

Hsiao-Wen Zan^*
, Kuo Hsi Yen
, Chien Hsun Chen
, Pu Kuan Liu
, O. Hsin Ku
, Jennchang Hwang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper, the low temperature AlN film (150°C) was proposed as the gate insulator for OTFTs. With the controlling of nitrogen gas flow rate, we suppressed the AlN dielectric leakage. The demonstrated AlN-OTFTs could be operated at low voltage (<5V), low threshold voltage (-1.5V) and extremely low sub-threshold swing (∼104mV/dec). Under the low-voltage biasing, the on/of current ratio was remained as high as >10⁵ and the averaged field effect mobility was in the range 0.02-0.1cm²/V-sec.

Original language	English
Pages (from-to)	296-298
Number of pages	3
Journal	SID Conference Record of the International Display Research Conference
State	Published - Jan 2006
Event	SID 26th International Display Research Conference - Kent, OH, United States Duration: 18 Sep 2006 → 21 Sep 2006

Keywords

AlN
Low-voltage
OTFTs

Cite this

@article{77ec8bac2de3428bac27f627eb470fa6,

title = "Suppressing the leakage on ain gate dielectrics and its application on low-voltage organic thin-film transistors",

abstract = "In this paper, the low temperature AlN film (150°C) was proposed as the gate insulator for OTFTs. With the controlling of nitrogen gas flow rate, we suppressed the AlN dielectric leakage. The demonstrated AlN-OTFTs could be operated at low voltage (<5V), low threshold voltage (-1.5V) and extremely low sub-threshold swing (∼104mV/dec). Under the low-voltage biasing, the on/of current ratio was remained as high as >105 and the averaged field effect mobility was in the range 0.02-0.1cm2/V-sec.",

keywords = "AlN, Low-voltage, OTFTs",

author = "Hsiao-Wen Zan and Yen, \{Kuo Hsi\} and Chen, \{Chien Hsun\} and Liu, \{Pu Kuan\} and Ku, \{O. Hsin\} and Jennchang Hwang",

year = "2006",

month = jan,

language = "English",

pages = "296--298",

journal = "SID Conference Record of the International Display Research Conference",

issn = "1083-1312",

publisher = "Society for Information Display",

note = "SID 26th International Display Research Conference ; Conference date: 18-09-2006 Through 21-09-2006",

}

TY - JOUR

T1 - Suppressing the leakage on ain gate dielectrics and its application on low-voltage organic thin-film transistors

AU - Zan, Hsiao-Wen

AU - Yen, Kuo Hsi

AU - Chen, Chien Hsun

AU - Liu, Pu Kuan

AU - Ku, O. Hsin

AU - Hwang, Jennchang

PY - 2006/1

Y1 - 2006/1

N2 - In this paper, the low temperature AlN film (150°C) was proposed as the gate insulator for OTFTs. With the controlling of nitrogen gas flow rate, we suppressed the AlN dielectric leakage. The demonstrated AlN-OTFTs could be operated at low voltage (<5V), low threshold voltage (-1.5V) and extremely low sub-threshold swing (∼104mV/dec). Under the low-voltage biasing, the on/of current ratio was remained as high as >105 and the averaged field effect mobility was in the range 0.02-0.1cm2/V-sec.

AB - In this paper, the low temperature AlN film (150°C) was proposed as the gate insulator for OTFTs. With the controlling of nitrogen gas flow rate, we suppressed the AlN dielectric leakage. The demonstrated AlN-OTFTs could be operated at low voltage (<5V), low threshold voltage (-1.5V) and extremely low sub-threshold swing (∼104mV/dec). Under the low-voltage biasing, the on/of current ratio was remained as high as >105 and the averaged field effect mobility was in the range 0.02-0.1cm2/V-sec.

KW - AlN

KW - Low-voltage

KW - OTFTs

UR - https://www.scopus.com/pages/publications/34748829791

M3 - Conference article

AN - SCOPUS:34748829791

SN - 1083-1312

SP - 296

EP - 298

JO - SID Conference Record of the International Display Research Conference

JF - SID Conference Record of the International Display Research Conference

T2 - SID 26th International Display Research Conference

Y2 - 18 September 2006 through 21 September 2006

ER -

Suppressing the leakage on ain gate dielectrics and its application on low-voltage organic thin-film transistors

Abstract

Keywords

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