Suppressing the initial growth of sidewall GaN by modifying micron-sized patterned sapphire substrate with H3PO4-based etchant

Wen Yang Hsu, Yuan Chi Lian, Pei Yu Wu, Wei Min Yong, Jinn Kong Sheu, Kun Lin Lin, Yew-Chuhg Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Fingerprint

Dive into the research topics of 'Suppressing the initial growth of sidewall GaN by modifying micron-sized patterned sapphire substrate with H3PO4-based etchant'. Together they form a unique fingerprint.

Keyphrases

Material Science

Engineering