Suppressing phosphorus diffusion in germanium by carbon incorporation

G. Luo; C. C. Cheng; C. Y. Huang; S. L. Hsu; Chao-Hsin Chien; W. X. Ni; C. Y. Chang

doi:10.1049/el:20052999

Suppressing phosphorus diffusion in germanium by carbon incorporation

G. Luo^*, C. C. Cheng, C. Y. Huang, S. L. Hsu, Chao-Hsin Chien, W. X. Ni, C. Y. Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A problem in the Ge MOSFET process is that the phosphorus for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.

Original language	English
Pages (from-to)	1354-1355
Number of pages	2
Journal	Electronics Letters
Volume	41
Issue number	24
DOIs	https://doi.org/10.1049/el:20052999
State	Published - 24 Nov 2005

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title = "Suppressing phosphorus diffusion in germanium by carbon incorporation",

abstract = "A problem in the Ge MOSFET process is that the phosphorus for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.",

author = "G. Luo and Cheng, {C. C.} and Huang, {C. Y.} and Hsu, {S. L.} and Chao-Hsin Chien and Ni, {W. X.} and Chang, {C. Y.}",

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AU - Luo, G.

AU - Cheng, C. C.

AU - Huang, C. Y.

AU - Hsu, S. L.

AU - Chien, Chao-Hsin

AU - Ni, W. X.

AU - Chang, C. Y.

PY - 2005/11/24

Y1 - 2005/11/24

N2 - A problem in the Ge MOSFET process is that the phosphorus for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.

AB - A problem in the Ge MOSFET process is that the phosphorus for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.

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U2 - 10.1049/el:20052999

DO - 10.1049/el:20052999

M3 - Article

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SN - 0013-5194

VL - 41

SP - 1354

EP - 1355

JO - Electronics Letters

JF - Electronics Letters

IS - 24

ER -

Suppressing phosphorus diffusion in germanium by carbon incorporation

Abstract

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