Suppressed fin-ler induced variability in negative capacitance finfets

Ho Pei Lee; Pin Su

doi:10.1109/LED.2017.2737025

Suppressed fin-ler induced variability in negative capacitance finfets

Ho Pei Lee
, Pin Su^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

This letter investigates the impact of fin line-edge roughness (Fin-LER) on the intrinsic variation of negative capacitance FinFETs (NC-FinFETs) by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. We report a feedback mechanism stemming from the internal voltage amplification inherent in the negative capacitance FET. This feedback mechanism results in the superior immunity to Fin-LER-induced threshold-voltage and subthreshold-swing variations for NC-FinFETs as compared with the FinFET counterparts. This letter may provide insights for device/circuit designs using negative capacitance FETs.

Original language	English
Article number	8003472
Pages (from-to)	1492-1495
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	10
DOIs	https://doi.org/10.1109/LED.2017.2737025
State	Published - Oct 2017

Keywords

Fin-ler
Finfet
Negative capacitance
Variability

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10.1109/LED.2017.2737025

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title = "Suppressed fin-ler induced variability in negative capacitance finfets",

abstract = "This letter investigates the impact of fin line-edge roughness (Fin-LER) on the intrinsic variation of negative capacitance FinFETs (NC-FinFETs) by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. We report a feedback mechanism stemming from the internal voltage amplification inherent in the negative capacitance FET. This feedback mechanism results in the superior immunity to Fin-LER-induced threshold-voltage and subthreshold-swing variations for NC-FinFETs as compared with the FinFET counterparts. This letter may provide insights for device/circuit designs using negative capacitance FETs.",

keywords = "Fin-ler, Finfet, Negative capacitance, Variability",

author = "Lee, \{Ho Pei\} and Pin Su",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2017",

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doi = "10.1109/LED.2017.2737025",

language = "English",

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AU - Lee, Ho Pei

AU - Su, Pin

PY - 2017/10

Y1 - 2017/10

N2 - This letter investigates the impact of fin line-edge roughness (Fin-LER) on the intrinsic variation of negative capacitance FinFETs (NC-FinFETs) by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. We report a feedback mechanism stemming from the internal voltage amplification inherent in the negative capacitance FET. This feedback mechanism results in the superior immunity to Fin-LER-induced threshold-voltage and subthreshold-swing variations for NC-FinFETs as compared with the FinFET counterparts. This letter may provide insights for device/circuit designs using negative capacitance FETs.

AB - This letter investigates the impact of fin line-edge roughness (Fin-LER) on the intrinsic variation of negative capacitance FinFETs (NC-FinFETs) by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. We report a feedback mechanism stemming from the internal voltage amplification inherent in the negative capacitance FET. This feedback mechanism results in the superior immunity to Fin-LER-induced threshold-voltage and subthreshold-swing variations for NC-FinFETs as compared with the FinFET counterparts. This letter may provide insights for device/circuit designs using negative capacitance FETs.

KW - Fin-ler

KW - Finfet

KW - Negative capacitance

KW - Variability

UR - https://www.scopus.com/pages/publications/85029166339

U2 - 10.1109/LED.2017.2737025

DO - 10.1109/LED.2017.2737025

M3 - Article

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EP - 1495

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

M1 - 8003472

ER -

Suppressed fin-ler induced variability in negative capacitance finfets

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Keywords

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