Suppressed Fin-LER induced variability in negative capacitance FinFETs

Ho Pei Lee; Pin Su

doi:10.23919/SNW.2017.8242282

Suppressed Fin-LER induced variability in negative capacitance FinFETs

Ho Pei Lee^*, Pin Su

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This work investigates the impact of fin-LER on the subthreshold characteristics of the negative-capacitance FinFETs by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. Our study indicates that the variability for V_t, SS and DIBL can be suppressed by the negative-capacitance feedback mechanism. The ferroelectric layer exhibits larger gate voltage amplification for the device with more severe short channel effect and vice versa, and explains the superior immunity to LER variation for the negative capacitance FinFETs.

Original language	English
Title of host publication	2017 Silicon Nanoelectronics Workshop, SNW 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	31-32
Number of pages	2
ISBN (Electronic)	9784863486478
DOIs	https://doi.org/10.23919/SNW.2017.8242282
State	Published - 29 Dec 2017
Event	22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan Duration: 4 Jun 2017 → 5 Jun 2017

Publication series

Name	2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume	2017-January

Conference

Conference	22nd Silicon Nanoelectronics Workshop, SNW 2017
Country/Territory	Japan
City	Kyoto
Period	4/06/17 → 5/06/17

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10.23919/SNW.2017.8242282

Cite this

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title = "Suppressed Fin-LER induced variability in negative capacitance FinFETs",

abstract = "This work investigates the impact of fin-LER on the subthreshold characteristics of the negative-capacitance FinFETs by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. Our study indicates that the variability for Vt, SS and DIBL can be suppressed by the negative-capacitance feedback mechanism. The ferroelectric layer exhibits larger gate voltage amplification for the device with more severe short channel effect and vice versa, and explains the superior immunity to LER variation for the negative capacitance FinFETs.",

author = "Lee, {Ho Pei} and Pin Su",

note = "Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",

year = "2017",

month = dec,

day = "29",

doi = "10.23919/SNW.2017.8242282",

language = "English",

series = "2017 Silicon Nanoelectronics Workshop, SNW 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "31--32",

booktitle = "2017 Silicon Nanoelectronics Workshop, SNW 2017",

address = "美國",

}

Lee, HP & Su, P 2017, Suppressed Fin-LER induced variability in negative capacitance FinFETs. in 2017 Silicon Nanoelectronics Workshop, SNW 2017., 8242282, 2017 Silicon Nanoelectronics Workshop, SNW 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 31-32, 22nd Silicon Nanoelectronics Workshop, SNW 2017, Kyoto, Japan, 4/06/17. https://doi.org/10.23919/SNW.2017.8242282

Suppressed Fin-LER induced variability in negative capacitance FinFETs. / Lee, Ho Pei; Su, Pin.
2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 31-32 8242282 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Lee, Ho Pei

AU - Su, Pin

PY - 2017/12/29

Y1 - 2017/12/29

N2 - This work investigates the impact of fin-LER on the subthreshold characteristics of the negative-capacitance FinFETs by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. Our study indicates that the variability for Vt, SS and DIBL can be suppressed by the negative-capacitance feedback mechanism. The ferroelectric layer exhibits larger gate voltage amplification for the device with more severe short channel effect and vice versa, and explains the superior immunity to LER variation for the negative capacitance FinFETs.

AB - This work investigates the impact of fin-LER on the subthreshold characteristics of the negative-capacitance FinFETs by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. Our study indicates that the variability for Vt, SS and DIBL can be suppressed by the negative-capacitance feedback mechanism. The ferroelectric layer exhibits larger gate voltage amplification for the device with more severe short channel effect and vice versa, and explains the superior immunity to LER variation for the negative capacitance FinFETs.

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DO - 10.23919/SNW.2017.8242282

M3 - Conference contribution

AN - SCOPUS:85051073034

T3 - 2017 Silicon Nanoelectronics Workshop, SNW 2017

SP - 31

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BT - 2017 Silicon Nanoelectronics Workshop, SNW 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 22nd Silicon Nanoelectronics Workshop, SNW 2017

Y2 - 4 June 2017 through 5 June 2017

ER -

Suppressed Fin-LER induced variability in negative capacitance FinFETs

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