Suppressed Fin-LER induced variability in negative capacitance FinFETs

Ho Pei Lee*, Pin Su

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    This work investigates the impact of fin-LER on the subthreshold characteristics of the negative-capacitance FinFETs by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. Our study indicates that the variability for Vt, SS and DIBL can be suppressed by the negative-capacitance feedback mechanism. The ferroelectric layer exhibits larger gate voltage amplification for the device with more severe short channel effect and vice versa, and explains the superior immunity to LER variation for the negative capacitance FinFETs.

    Original languageEnglish
    Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages31-32
    Number of pages2
    ISBN (Electronic)9784863486478
    DOIs
    StatePublished - 29 Dec 2017
    Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
    Duration: 4 Jun 20175 Jun 2017

    Publication series

    Name2017 Silicon Nanoelectronics Workshop, SNW 2017
    Volume2017-January

    Conference

    Conference22nd Silicon Nanoelectronics Workshop, SNW 2017
    Country/TerritoryJapan
    CityKyoto
    Period4/06/175/06/17

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