TY - JOUR
T1 - Suppressed Defects by Functional Thermally Cross-Linked Fullerene for High-Efficiency Tin-Lead Perovskite Solar Cells
AU - Zhao, Jinbo
AU - Su, Zhenhuang
AU - Pascual, Jorge
AU - Wu, Hongzhuo
AU - Wang, Haibin
AU - Aldamasy, Mahmoud H.
AU - Zhou, Zhengji
AU - Wang, Chenyue
AU - Li, Guixiang
AU - Li, Zhe
AU - Gao, Xingyu
AU - Hsu, Chain Shu
AU - Li, Meng
N1 - Publisher Copyright:
© 2024 The Author(s). Advanced Materials published by Wiley-VCH GmbH.
PY - 2024/9/5
Y1 - 2024/9/5
N2 - Mixed tin-lead (Sn-Pb) perovskites have attracted the attention of the community due to their narrow bandgap, ideal for photovoltaic applications, especially tandem solar cells. However, the oxidation and rapid crystallization of Sn2+ and the interfacial traps hinder their development. Here, cross-linkable [6,6]-phenyl-C61-butyric styryl dendron ester (C-PCBSD) is introduced during the quenching step of perovskite thin film processing to suppress the generation of surface defects at the electron transport layer interface and improve the bulk crystallinity. The C-PCBSD has strong coordination ability with Sn2+ and Pb2+ perovskite precursors, which retards the crystallization process, suppresses the oxidation of Sn2+, and improves the perovskite bulk and surface crystallinity, yielding films with reduced nonradiative recombination and enhanced interface charge extraction. Besides, the C-PCBSD network deposited on the perovskite surface displays superior hydrophobicity and oxygen resistance. Consequently, the devices with C-PCBSD obtain PCEs of up to 23.4% and retained 97% of initial efficiency after 2000 h of storage in a N2 atmosphere.
AB - Mixed tin-lead (Sn-Pb) perovskites have attracted the attention of the community due to their narrow bandgap, ideal for photovoltaic applications, especially tandem solar cells. However, the oxidation and rapid crystallization of Sn2+ and the interfacial traps hinder their development. Here, cross-linkable [6,6]-phenyl-C61-butyric styryl dendron ester (C-PCBSD) is introduced during the quenching step of perovskite thin film processing to suppress the generation of surface defects at the electron transport layer interface and improve the bulk crystallinity. The C-PCBSD has strong coordination ability with Sn2+ and Pb2+ perovskite precursors, which retards the crystallization process, suppresses the oxidation of Sn2+, and improves the perovskite bulk and surface crystallinity, yielding films with reduced nonradiative recombination and enhanced interface charge extraction. Besides, the C-PCBSD network deposited on the perovskite surface displays superior hydrophobicity and oxygen resistance. Consequently, the devices with C-PCBSD obtain PCEs of up to 23.4% and retained 97% of initial efficiency after 2000 h of storage in a N2 atmosphere.
KW - cross-link fullerene
KW - defect passivation
KW - long time stability
KW - Sn-Pb perovskite solar cell
UR - http://www.scopus.com/inward/record.url?scp=85198997438&partnerID=8YFLogxK
U2 - 10.1002/adma.202406246
DO - 10.1002/adma.202406246
M3 - Article
C2 - 39032067
AN - SCOPUS:85198997438
SN - 0935-9648
VL - 36
JO - Advanced Materials
JF - Advanced Materials
IS - 36
M1 - 2406246
ER -
