Keyphrases
Field-effect Transistors
100%
Transistor
100%
Gate Oxide
100%
Body Thickness
100%
Effective Mobility
100%
Thin Body
100%
Quasi-two-dimensional
100%
Silica
50%
Single-crystalline
50%
Insulator
50%
Order of Magnitude
50%
3D IC
50%
Three-dimensional (3D)
50%
Nanosheets
50%
High Dielectric Constant
50%
InGaAs
50%
Electron Density
50%
Effective Field
50%
New Discovery
50%
Oxide Surfaces
50%
Bulk Si
50%
Ultra-thin Body
50%
Nanocrystalline
50%
Channel Material
50%
Embedded Memory
50%
Surface Scattering
50%
Crystalline Si
50%
Electronic Wave Functions
50%
Decay Rate
50%
Effective Mass
50%
Nitrogen Content
50%
Universal Curve
50%
Two-dimensional MoS2
50%
Record-breaking
50%
Oxide-semiconductor Interfaces
50%
Biological Brain
50%
Polar Optical Phonon Scattering
50%
Engineering
Field-Effect Transistor
100%
Two Dimensional
100%
Gate Oxide
66%
Three Dimensional Integrated Circuits
33%
High Dielectric Constant
33%
Indium Gallium Arsenide
33%
Optical Phonon
33%
Effective Field
33%
Nanocrystalline
33%
Oxide Semiconductor
33%
Nanosheet
33%
Silicon Dioxide
33%
Carrier Concentration
33%
Molybdenum Disulfide
33%
Material Science
Transistor
100%
Field Effect Transistor
100%
Electronic Circuit
50%
Permittivity
50%
Carrier Concentration
50%
Nanosheet
50%
Indium Gallium Arsenide
50%
Oxide Semiconductor
50%
Oxide Surface
50%
Nanocrystalline
50%
Physics
Field Effect Transistor
100%
Integrated Circuit
50%
Electron Density
50%
Wave Function
50%
Permittivity
50%
Nanocrystalline
50%
Nanosheet
50%
Phonon
50%