Subwavelength gratings fabricated on semiconductor substrates via E-beam lithography and lift-off method

Kien-Wen Sun; Shih Chieh Huang; Ara Kechiantz; Chien Ping Lee

doi:10.1007/s11082-005-2027-1

Subwavelength gratings fabricated on semiconductor substrates via E-beam lithography and lift-off method

Kien-Wen Sun^*, Shih Chieh Huang, Ara Kechiantz, Chien Ping Lee

^*Corresponding author for this work

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We present results of the fabrication and measurements on reflective polarizers consisting of stacked bi-layer subwavelength metal gratings prepared on GaAs (100) substrates. These linear gratings were fabricated using electron-beam direct-writing lithography and the lift-off method with periods less than the wavelength of light used for measurements. At normal incidence, the polarizer reflects the light polarized perpendicular to the grating lines (transverse magnetic polarization, TM polarized) but absorbs parallel-polarized light (transverse electric polarization, TE polarized). By optimizing structural parameters, the polarization extinction ratio close to 20 has been experimentally achieved at wavelength of 650 nm.

Original language	English
Pages (from-to)	425-432
Number of pages	8
Journal	Optical and Quantum Electronics
Volume	37
Issue number	4
DOIs	https://doi.org/10.1007/s11082-005-2027-1
State	Published - 1 Mar 2005

Keywords

Birefringence
E-beam lithography
Polarizer
Subwavelength grating

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10.1007/s11082-005-2027-1

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title = "Subwavelength gratings fabricated on semiconductor substrates via E-beam lithography and lift-off method",

abstract = "We present results of the fabrication and measurements on reflective polarizers consisting of stacked bi-layer subwavelength metal gratings prepared on GaAs (100) substrates. These linear gratings were fabricated using electron-beam direct-writing lithography and the lift-off method with periods less than the wavelength of light used for measurements. At normal incidence, the polarizer reflects the light polarized perpendicular to the grating lines (transverse magnetic polarization, TM polarized) but absorbs parallel-polarized light (transverse electric polarization, TE polarized). By optimizing structural parameters, the polarization extinction ratio close to 20 has been experimentally achieved at wavelength of 650 nm.",

keywords = "Birefringence, E-beam lithography, Polarizer, Subwavelength grating",

author = "Kien-Wen Sun and Huang, {Shih Chieh} and Ara Kechiantz and Lee, {Chien Ping}",

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doi = "10.1007/s11082-005-2027-1",

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T1 - Subwavelength gratings fabricated on semiconductor substrates via E-beam lithography and lift-off method

AU - Sun, Kien-Wen

AU - Huang, Shih Chieh

AU - Kechiantz, Ara

AU - Lee, Chien Ping

PY - 2005/3/1

Y1 - 2005/3/1

N2 - We present results of the fabrication and measurements on reflective polarizers consisting of stacked bi-layer subwavelength metal gratings prepared on GaAs (100) substrates. These linear gratings were fabricated using electron-beam direct-writing lithography and the lift-off method with periods less than the wavelength of light used for measurements. At normal incidence, the polarizer reflects the light polarized perpendicular to the grating lines (transverse magnetic polarization, TM polarized) but absorbs parallel-polarized light (transverse electric polarization, TE polarized). By optimizing structural parameters, the polarization extinction ratio close to 20 has been experimentally achieved at wavelength of 650 nm.

AB - We present results of the fabrication and measurements on reflective polarizers consisting of stacked bi-layer subwavelength metal gratings prepared on GaAs (100) substrates. These linear gratings were fabricated using electron-beam direct-writing lithography and the lift-off method with periods less than the wavelength of light used for measurements. At normal incidence, the polarizer reflects the light polarized perpendicular to the grating lines (transverse magnetic polarization, TM polarized) but absorbs parallel-polarized light (transverse electric polarization, TE polarized). By optimizing structural parameters, the polarization extinction ratio close to 20 has been experimentally achieved at wavelength of 650 nm.

KW - Birefringence

KW - E-beam lithography

KW - Polarizer

KW - Subwavelength grating

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U2 - 10.1007/s11082-005-2027-1

DO - 10.1007/s11082-005-2027-1

M3 - Article

AN - SCOPUS:21144455585

SN - 0306-8919

VL - 37

SP - 425

EP - 432

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 4

ER -

Subwavelength gratings fabricated on semiconductor substrates via E-beam lithography and lift-off method

Abstract

Keywords

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