Subthreshold FinFET SRAM cell optimization considering surface-orientation dependent variability

Ming Long Fan; Vita Pi Ho Hu; Chien Yu Hsieh; Pin Su; Ching Te Chuang

doi:10.1109/ESSDERC.2010.5618391

Subthreshold FinFET SRAM cell optimization considering surface-orientation dependent variability

Ming Long Fan^*, Vita Pi Ho Hu, Chien Yu Hsieh, Pin Su, Ching Te Chuang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

This work investigates the impact of device intrinsic variation on the stability/variability of subthreshold 6T FinFET SRAM cells with (110)/(100) surface orientations. Due to the difference in the degree of quantum confinement, NFET with (110) orientation shows larger fin Line-Edge-Roughness (LER) induced threshold-voltage variation than the (100) one, while PFET shows the opposite trend. Therefore, the stability of conventional (PU, PD, PG) = (110, 110, 110) cell is inferior and fails to provide sufficient margin. With the optimized orientation, significant μ/σ ratio improvement can be achieved by using (PU, PD, PG) = (110, 100, 100) SRAM cell. Our analysis establishes the potential of 6T FinFET cells with appropriate optimization for emerging subthreshold SRAM applications.

Original language	English
Title of host publication	2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
Pages	198-201
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDERC.2010.5618391
State	Published - 2010
Event	2010 European Solid State Device Research Conference, ESSDERC 2010 - Sevilla, Spain Duration: 14 Sep 2010 → 16 Sep 2010

Publication series

Name	2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Conference

Conference	2010 European Solid State Device Research Conference, ESSDERC 2010
Country/Territory	Spain
City	Sevilla
Period	14/09/10 → 16/09/10

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10.1109/ESSDERC.2010.5618391

Cite this

Fan, M. L., Hu, V. P. H., Hsieh, C. Y., Su, P., & Chuang, C. T. (2010). Subthreshold FinFET SRAM cell optimization considering surface-orientation dependent variability. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010 (pp. 198-201). Article 5618391 (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010). https://doi.org/10.1109/ESSDERC.2010.5618391

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title = "Subthreshold FinFET SRAM cell optimization considering surface-orientation dependent variability",

abstract = "This work investigates the impact of device intrinsic variation on the stability/variability of subthreshold 6T FinFET SRAM cells with (110)/(100) surface orientations. Due to the difference in the degree of quantum confinement, NFET with (110) orientation shows larger fin Line-Edge-Roughness (LER) induced threshold-voltage variation than the (100) one, while PFET shows the opposite trend. Therefore, the stability of conventional (PU, PD, PG) = (110, 110, 110) cell is inferior and fails to provide sufficient margin. With the optimized orientation, significant μ/σ ratio improvement can be achieved by using (PU, PD, PG) = (110, 100, 100) SRAM cell. Our analysis establishes the potential of 6T FinFET cells with appropriate optimization for emerging subthreshold SRAM applications.",

author = "Fan, {Ming Long} and Hu, {Vita Pi Ho} and Hsieh, {Chien Yu} and Pin Su and Chuang, {Ching Te}",

year = "2010",

doi = "10.1109/ESSDERC.2010.5618391",

language = "English",

isbn = "9781424466610",

series = "2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010",

pages = "198--201",

booktitle = "2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010",

note = "2010 European Solid State Device Research Conference, ESSDERC 2010 ; Conference date: 14-09-2010 Through 16-09-2010",

}

Fan, ML, Hu, VPH, Hsieh, CY, Su, P & Chuang, CT 2010, Subthreshold FinFET SRAM cell optimization considering surface-orientation dependent variability. in 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010., 5618391, 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010, pp. 198-201, 2010 European Solid State Device Research Conference, ESSDERC 2010, Sevilla, Spain, 14/09/10. https://doi.org/10.1109/ESSDERC.2010.5618391

Subthreshold FinFET SRAM cell optimization considering surface-orientation dependent variability. / Fan, Ming Long; Hu, Vita Pi Ho; Hsieh, Chien Yu et al.
2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 198-201 5618391 (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Subthreshold FinFET SRAM cell optimization considering surface-orientation dependent variability

AU - Fan, Ming Long

AU - Hu, Vita Pi Ho

AU - Hsieh, Chien Yu

AU - Su, Pin

AU - Chuang, Ching Te

PY - 2010

Y1 - 2010

N2 - This work investigates the impact of device intrinsic variation on the stability/variability of subthreshold 6T FinFET SRAM cells with (110)/(100) surface orientations. Due to the difference in the degree of quantum confinement, NFET with (110) orientation shows larger fin Line-Edge-Roughness (LER) induced threshold-voltage variation than the (100) one, while PFET shows the opposite trend. Therefore, the stability of conventional (PU, PD, PG) = (110, 110, 110) cell is inferior and fails to provide sufficient margin. With the optimized orientation, significant μ/σ ratio improvement can be achieved by using (PU, PD, PG) = (110, 100, 100) SRAM cell. Our analysis establishes the potential of 6T FinFET cells with appropriate optimization for emerging subthreshold SRAM applications.

AB - This work investigates the impact of device intrinsic variation on the stability/variability of subthreshold 6T FinFET SRAM cells with (110)/(100) surface orientations. Due to the difference in the degree of quantum confinement, NFET with (110) orientation shows larger fin Line-Edge-Roughness (LER) induced threshold-voltage variation than the (100) one, while PFET shows the opposite trend. Therefore, the stability of conventional (PU, PD, PG) = (110, 110, 110) cell is inferior and fails to provide sufficient margin. With the optimized orientation, significant μ/σ ratio improvement can be achieved by using (PU, PD, PG) = (110, 100, 100) SRAM cell. Our analysis establishes the potential of 6T FinFET cells with appropriate optimization for emerging subthreshold SRAM applications.

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M3 - Conference contribution

AN - SCOPUS:78649943178

SN - 9781424466610

T3 - 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

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BT - 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

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Fan ML, Hu VPH, Hsieh CY, Su P, Chuang CT. Subthreshold FinFET SRAM cell optimization considering surface-orientation dependent variability. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 198-201. 5618391. (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010). doi: 10.1109/ESSDERC.2010.5618391

Subthreshold FinFET SRAM cell optimization considering surface-orientation dependent variability

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