Subnanometer scaling of HfO2/metal electrode gate stacks

Jeff J. Peterson; Chadwin D. Young; Joel Barnett; Sundar Gopalan; Jim Gutt; Choong Ho Lee; Hong Jyh Li; Tuo-Hung Hou; Yudong Kim; Chan Lim; Nirmal Chaudhary; Naim Moumen; Byoung Hun Lee; Gennadi Bersuker; George A. Brown; Peter M. Zeitzoff; Mark I. Gardner; Robert W. Murto; Howard R. Huff

doi:10.1149/1.1760712

Subnanometer scaling of HfO₂/metal electrode gate stacks

Jeff J. Peterson^*, Chadwin D. Young, Joel Barnett, Sundar Gopalan, Jim Gutt, Choong Ho Lee, Hong Jyh Li, Tuo-Hung Hou, Yudong Kim, Chan Lim, Nirmal Chaudhary, Naim Moumen, Byoung Hun Lee, Gennadi Bersuker, George A. Brown, Peter M. Zeitzoff, Mark I. Gardner, Robert W. Murto, Howard R. Huff

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

The equivalent oxide thickness (EOT) of high-k n-channel metal oxide semiconductor (NMOS) transistors was scaled using 3 methods, (i) reduction of the bottom interfacial layer (BIL) using NH₃ interface engineering, (ii) thickness reduction of the HfO₂ dielectric, and (iii) use of metal gate electrodes to minimize top interfacial growth formation and polysilicon depletion. NMOS transistors fabricated using these methods demonstrate 0.72 nm EOT using the NH₃ BIL with scaled HfO ₂/metal gates and 0.81 nm EOT using the O₃ BIL with scaled HfO₂/metal gates. Charge pumping, mobility, and device performance results of these high-k NMOS transistors is discussed.

Original language	English
Pages (from-to)	G164-G167
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	8
DOIs	https://doi.org/10.1149/1.1760712
State	Published - 2004

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Peterson, J. J., Young, C. D., Barnett, J., Gopalan, S., Gutt, J., Lee, C. H., Li, H. J., Hou, T.-H., Kim, Y., Lim, C., Chaudhary, N., Moumen, N., Lee, B. H., Bersuker, G., Brown, G. A., Zeitzoff, P. M., Gardner, M. I., Murto, R. W., & Huff, H. R. (2004). Subnanometer scaling of HfO₂/metal electrode gate stacks. Electrochemical and Solid-State Letters, 7(8), G164-G167. https://doi.org/10.1149/1.1760712

@article{99f7448e8fd448309b6184ffbe9dd32a,

title = "Subnanometer scaling of HfO2/metal electrode gate stacks",

abstract = "The equivalent oxide thickness (EOT) of high-k n-channel metal oxide semiconductor (NMOS) transistors was scaled using 3 methods, (i) reduction of the bottom interfacial layer (BIL) using NH3 interface engineering, (ii) thickness reduction of the HfO2 dielectric, and (iii) use of metal gate electrodes to minimize top interfacial growth formation and polysilicon depletion. NMOS transistors fabricated using these methods demonstrate 0.72 nm EOT using the NH3 BIL with scaled HfO 2/metal gates and 0.81 nm EOT using the O3 BIL with scaled HfO2/metal gates. Charge pumping, mobility, and device performance results of these high-k NMOS transistors is discussed.",

author = "Peterson, {Jeff J.} and Young, {Chadwin D.} and Joel Barnett and Sundar Gopalan and Jim Gutt and Lee, {Choong Ho} and Li, {Hong Jyh} and Tuo-Hung Hou and Yudong Kim and Chan Lim and Nirmal Chaudhary and Naim Moumen and Lee, {Byoung Hun} and Gennadi Bersuker and Brown, {George A.} and Zeitzoff, {Peter M.} and Gardner, {Mark I.} and Murto, {Robert W.} and Huff, {Howard R.}",

year = "2004",

doi = "10.1149/1.1760712",

language = "English",

volume = "7",

pages = "G164--G167",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "8",

}

Peterson, JJ, Young, CD, Barnett, J, Gopalan, S, Gutt, J, Lee, CH, Li, HJ, Hou, T-H, Kim, Y, Lim, C, Chaudhary, N, Moumen, N, Lee, BH, Bersuker, G, Brown, GA, Zeitzoff, PM, Gardner, MI, Murto, RW & Huff, HR 2004, 'Subnanometer scaling of HfO₂/metal electrode gate stacks', Electrochemical and Solid-State Letters, vol. 7, no. 8, pp. G164-G167. https://doi.org/10.1149/1.1760712

TY - JOUR

T1 - Subnanometer scaling of HfO2/metal electrode gate stacks

AU - Peterson, Jeff J.

AU - Young, Chadwin D.

AU - Barnett, Joel

AU - Gopalan, Sundar

AU - Gutt, Jim

AU - Lee, Choong Ho

AU - Li, Hong Jyh

AU - Hou, Tuo-Hung

AU - Kim, Yudong

AU - Lim, Chan

AU - Chaudhary, Nirmal

AU - Moumen, Naim

AU - Lee, Byoung Hun

AU - Bersuker, Gennadi

AU - Brown, George A.

AU - Zeitzoff, Peter M.

AU - Gardner, Mark I.

AU - Murto, Robert W.

AU - Huff, Howard R.

PY - 2004

Y1 - 2004

N2 - The equivalent oxide thickness (EOT) of high-k n-channel metal oxide semiconductor (NMOS) transistors was scaled using 3 methods, (i) reduction of the bottom interfacial layer (BIL) using NH3 interface engineering, (ii) thickness reduction of the HfO2 dielectric, and (iii) use of metal gate electrodes to minimize top interfacial growth formation and polysilicon depletion. NMOS transistors fabricated using these methods demonstrate 0.72 nm EOT using the NH3 BIL with scaled HfO 2/metal gates and 0.81 nm EOT using the O3 BIL with scaled HfO2/metal gates. Charge pumping, mobility, and device performance results of these high-k NMOS transistors is discussed.

AB - The equivalent oxide thickness (EOT) of high-k n-channel metal oxide semiconductor (NMOS) transistors was scaled using 3 methods, (i) reduction of the bottom interfacial layer (BIL) using NH3 interface engineering, (ii) thickness reduction of the HfO2 dielectric, and (iii) use of metal gate electrodes to minimize top interfacial growth formation and polysilicon depletion. NMOS transistors fabricated using these methods demonstrate 0.72 nm EOT using the NH3 BIL with scaled HfO 2/metal gates and 0.81 nm EOT using the O3 BIL with scaled HfO2/metal gates. Charge pumping, mobility, and device performance results of these high-k NMOS transistors is discussed.

UR - http://www.scopus.com/inward/record.url?scp=4344611701&partnerID=8YFLogxK

U2 - 10.1149/1.1760712

DO - 10.1149/1.1760712

M3 - Article

AN - SCOPUS:4344611701

SN - 1099-0062

VL - 7

SP - G164-G167

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 8

ER -

Subnanometer scaling of HfO₂/metal electrode gate stacks

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