Submicrometer p-Type SnO Thin-Film Transistors Fabricated by Film Profile Engineering Method

Ming Hung Wu; Horng-Chih Lin; Pei-Wen Li

doi:10.1109/TED.2019.2897813

Submicrometer p-Type SnO Thin-Film Transistors Fabricated by Film Profile Engineering Method

Ming Hung Wu, Horng-Chih Lin^*, Pei-Wen Li

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We reported the fabrication of submicrometer p-type tin monoxide (SnO) thin-film transistors (TFTs) with a channel length of 0.2μm for back-end-of-line applications using a film profile engineering (FPE) approach. Material analyses indicate that the as-deposited SnO films are amorphous, while be transformed to polycrystalline after a thermal annealing in oxygen ambient. Fabricated p-type SnO FPE-TFTs of a channel length of 0.2μm were manifested with ON/OFF current ratio higher than 10⁵ and subthreshold slope of 320 mV/decade, superior to the data of submicrometer SnO devices ever reported. The extracted field-effect mobility is about 0.25 cm²/V·s. After ruling out the influence of source/drain series resistance, the intrinsic field-effect mobility is found to be about 1 cm/V·s.

Original language	English
Article number	8643587
Pages (from-to)	1766-1771
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	4
DOIs	https://doi.org/10.1109/TED.2019.2897813
State	Published - Apr 2019

Keywords

Source/drain series resistance
thin-film transistor (TFT)
tin monoxide (SnO)

Access to Document

10.1109/TED.2019.2897813

Cite this

@article{d6e569e18d4e46deb9899ceea2a42c10,

title = "Submicrometer p-Type SnO Thin-Film Transistors Fabricated by Film Profile Engineering Method",

abstract = "We reported the fabrication of submicrometer p-type tin monoxide (SnO) thin-film transistors (TFTs) with a channel length of 0.2μm for back-end-of-line applications using a film profile engineering (FPE) approach. Material analyses indicate that the as-deposited SnO films are amorphous, while be transformed to polycrystalline after a thermal annealing in oxygen ambient. Fabricated p-type SnO FPE-TFTs of a channel length of 0.2μm were manifested with ON/OFF current ratio higher than 105 and subthreshold slope of 320 mV/decade, superior to the data of submicrometer SnO devices ever reported. The extracted field-effect mobility is about 0.25 cm2/V·s. After ruling out the influence of source/drain series resistance, the intrinsic field-effect mobility is found to be about 1 cm/V·s.",

keywords = "Source/drain series resistance, thin-film transistor (TFT), tin monoxide (SnO)",

author = "Wu, {Ming Hung} and Horng-Chih Lin and Pei-Wen Li",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.",

year = "2019",

month = apr,

doi = "10.1109/TED.2019.2897813",

language = "English",

volume = "66",

pages = "1766--1771",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Submicrometer p-Type SnO Thin-Film Transistors Fabricated by Film Profile Engineering Method

AU - Wu, Ming Hung

AU - Lin, Horng-Chih

AU - Li, Pei-Wen

PY - 2019/4

Y1 - 2019/4

N2 - We reported the fabrication of submicrometer p-type tin monoxide (SnO) thin-film transistors (TFTs) with a channel length of 0.2μm for back-end-of-line applications using a film profile engineering (FPE) approach. Material analyses indicate that the as-deposited SnO films are amorphous, while be transformed to polycrystalline after a thermal annealing in oxygen ambient. Fabricated p-type SnO FPE-TFTs of a channel length of 0.2μm were manifested with ON/OFF current ratio higher than 105 and subthreshold slope of 320 mV/decade, superior to the data of submicrometer SnO devices ever reported. The extracted field-effect mobility is about 0.25 cm2/V·s. After ruling out the influence of source/drain series resistance, the intrinsic field-effect mobility is found to be about 1 cm/V·s.

AB - We reported the fabrication of submicrometer p-type tin monoxide (SnO) thin-film transistors (TFTs) with a channel length of 0.2μm for back-end-of-line applications using a film profile engineering (FPE) approach. Material analyses indicate that the as-deposited SnO films are amorphous, while be transformed to polycrystalline after a thermal annealing in oxygen ambient. Fabricated p-type SnO FPE-TFTs of a channel length of 0.2μm were manifested with ON/OFF current ratio higher than 105 and subthreshold slope of 320 mV/decade, superior to the data of submicrometer SnO devices ever reported. The extracted field-effect mobility is about 0.25 cm2/V·s. After ruling out the influence of source/drain series resistance, the intrinsic field-effect mobility is found to be about 1 cm/V·s.

KW - Source/drain series resistance

KW - thin-film transistor (TFT)

KW - tin monoxide (SnO)

UR - http://www.scopus.com/inward/record.url?scp=85063297642&partnerID=8YFLogxK

U2 - 10.1109/TED.2019.2897813

DO - 10.1109/TED.2019.2897813

M3 - Article

AN - SCOPUS:85063297642

SN - 0018-9383

VL - 66

SP - 1766

EP - 1771

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

M1 - 8643587

ER -

Submicrometer p-Type SnO Thin-Film Transistors Fabricated by Film Profile Engineering Method

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this