Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions

GongTan Li, Runze Zhan, Bo-Ru Yang*, Chuan Liu, Chengyuan Dong, Chia-Yu Lee, Yuan-Chun Wu, Po-Yen Lu, Shaozhi Deng, Han-Ping Shieh, Ningsheng Xu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Fingerprint

Dive into the research topics of 'Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions'. Together they form a unique fingerprint.

Keyphrases

Engineering

Physics

Earth and Planetary Sciences

Material Science

Chemical Engineering