Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions
Research output: Contribution to journal › Article › peer-review
21Scopus
citations
Fingerprint
Dive into the research topics of 'Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions'. Together they form a unique fingerprint.