Abstract
We introduced a conformal atomic-layer-deposited aluminum oxide layer to cover the imprint mold to reduce the feature size and to strengthen the mold durability. A nano-hole array pattern with diameter down to 85 nm was successfully transferred to sample substrate to fabricate a vertical organic transistor. The Imprint vertical organic transistor exhibited high output current density as 4.35 cm2/V s and high ON/OFF current ratio as 11,000 at a low operation voltage as 1.5 V.
Original language | English |
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Pages (from-to) | 3609-3614 |
Number of pages | 6 |
Journal | Organic Electronics |
Volume | 15 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2014 |
Keywords
- Atomic layer deposition (ALD)
- Nanoimprint
- Organic transistor
- Vertical channel