Sub-100 nm ALD-assisted nanoimprint lithography for realizing vertical organic transistors with high ON/OFF ratio and high output current

Yung Hsu, Xiang Fang, Lon A. Wang*, Hsiao-Wen Zan, Hsin-Fei Meng, Sheng-Hsiung Yang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

We introduced a conformal atomic-layer-deposited aluminum oxide layer to cover the imprint mold to reduce the feature size and to strengthen the mold durability. A nano-hole array pattern with diameter down to 85 nm was successfully transferred to sample substrate to fabricate a vertical organic transistor. The Imprint vertical organic transistor exhibited high output current density as 4.35 cm2/V s and high ON/OFF current ratio as 11,000 at a low operation voltage as 1.5 V.

Original languageEnglish
Pages (from-to)3609-3614
Number of pages6
JournalOrganic Electronics
Volume15
Issue number12
DOIs
StatePublished - Dec 2014

Keywords

  • Atomic layer deposition (ALD)
  • Nanoimprint
  • Organic transistor
  • Vertical channel

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