Study on transparent amorphous indium oxide thin film transistors technology

Chih Hsiang Chang; Yu Chia Lai; Yang Shun Fan; Che Chia Chang; Po-Tsun Liu

doi:10.1109/IPFA.2015.7224410

Study on transparent amorphous indium oxide thin film transistors technology

Chih Hsiang Chang, Yu Chia Lai, Yang Shun Fan, Che Chia Chang, Po-Tsun Liu

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, we analyzed the In ₂ O ₃ thin films with different oxygen flow rate during sputtering as the transistor's channel layer. The electrical analysis including device's reliability and material analysis were both examined.

Original language	English
Title of host publication	Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	399-403
Number of pages	5
ISBN (Electronic)	9781479999286
DOIs	https://doi.org/10.1109/IPFA.2015.7224410
State	Published - Jun 2015
Event	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan Duration: 29 Jun 2015 → 2 Jul 2015

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2015-August

Conference

Conference	22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
Country/Territory	Taiwan
City	Hsinchu
Period	29/06/15 → 2/07/15

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10.1109/IPFA.2015.7224410

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Chang, C. H., Lai, Y. C., Fan, Y. S., Chang, C. C., & Liu, P-T. (2015). Study on transparent amorphous indium oxide thin film transistors technology. In Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 (pp. 399-403). [7224410] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2015.7224410

Chang, Chih Hsiang ; Lai, Yu Chia ; Fan, Yang Shun et al. / Study on transparent amorphous indium oxide thin film transistors technology. Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 399-403 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{9b5192ed8f0d4361a69728edb0a5eca3,

title = "Study on transparent amorphous indium oxide thin film transistors technology",

abstract = " In this study, we analyzed the In 2 O 3 thin films with different oxygen flow rate during sputtering as the transistor's channel layer. The electrical analysis including device's reliability and material analysis were both examined. ",

author = "Chang, {Chih Hsiang} and Lai, {Yu Chia} and Fan, {Yang Shun} and Chang, {Che Chia} and Po-Tsun Liu",

year = "2015",

month = jun,

doi = "10.1109/IPFA.2015.7224410",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "399--403",

booktitle = "Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015",

address = "United States",

note = "22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 ; Conference date: 29-06-2015 Through 02-07-2015",

}

Chang, CH, Lai, YC, Fan, YS, Chang, CC & Liu, P-T 2015, Study on transparent amorphous indium oxide thin film transistors technology. in Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015., 7224410, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. 399-403, 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015, Hsinchu, Taiwan, 29/06/15. https://doi.org/10.1109/IPFA.2015.7224410

Study on transparent amorphous indium oxide thin film transistors technology. / Chang, Chih Hsiang; Lai, Yu Chia; Fan, Yang Shun et al.
Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 399-403 7224410 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Study on transparent amorphous indium oxide thin film transistors technology

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AU - Lai, Yu Chia

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AU - Chang, Che Chia

AU - Liu, Po-Tsun

PY - 2015/6

Y1 - 2015/6

N2 - In this study, we analyzed the In 2 O 3 thin films with different oxygen flow rate during sputtering as the transistor's channel layer. The electrical analysis including device's reliability and material analysis were both examined.

AB - In this study, we analyzed the In 2 O 3 thin films with different oxygen flow rate during sputtering as the transistor's channel layer. The electrical analysis including device's reliability and material analysis were both examined.

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DO - 10.1109/IPFA.2015.7224410

M3 - Conference contribution

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T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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BT - Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 29 June 2015 through 2 July 2015

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Chang CH, Lai YC, Fan YS, Chang CC, Liu P-T. Study on transparent amorphous indium oxide thin film transistors technology. In Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 399-403. 7224410. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2015.7224410

Study on transparent amorphous indium oxide thin film transistors technology

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