Study on the roles of charge trapping and fixed charge on subthreshold characteristics of FeFETs

C. Jin*, C. J. Su, Y. J. Lee, P. J. Sung, T. Hiramoto, M. Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Charge trapping (CT) and fixed charge (FC) are considered in the model of transient negative capacitance (TNC). The roles of CT and FC on subthreshold characteristics of ferroelectric FET (FeFET) are investigated by experiment and simulation. The simulation results show that both CT and FC can modulate the subthreshold characteristics of FeFET by shifting the operation point dynamically and statically, respectively. In addition, ferroelectric hysteresis can be reduced by the compensation due to CT and minor loop formation due to FC in a certain Vg sweep range. As a result, sub-60 mV/decade subthreshold swing (SS) with nearly hysteresis-free operation observed in experiments can be qualitatively reproduced by our simulation framework of TNC if both CT and FC are well-considered.

Original languageEnglish
Article number9328213
Pages (from-to)1304-1312
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume68
Issue number3
DOIs
StatePublished - Mar 2021

Keywords

  • Charge trapping (CT)
  • ferroelectric
  • FET
  • fixed charge (FC)
  • negative capacitance

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