Study on the ESD-induced gate-oxide breakdown and the protection solution in 28nm high-k metal-gate CMOS technology

Chun Yu Lin; Ming-Dou Ker; Pin Hsin Chang; Wen Tai Wang

doi:10.1109/NMDC.2015.7439250

Study on the ESD-induced gate-oxide breakdown and the protection solution in 28nm high-k metal-gate CMOS technology

Chun Yu Lin, Ming-Dou Ker, Pin Hsin Chang, Wen Tai Wang

Institute of Photonic System

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

To protect the IC chips against the electrostatic discharge (ESD) damages in 28nm high-k metal-gate (HKMG) CMOS technology, the ESD protection consideration was studied in this work. The ESD design window was found to be within 1V and 5.1V in 28nm HKMG CMOS technology. An ESD protection device of PMOS with embedded silicon-controlled rectifier (SCR) was investigated to be suitable for ESD protection in such narrow ESD design window.

Original language	English
Title of host publication	2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467393621
DOIs	https://doi.org/10.1109/NMDC.2015.7439250
State	Published - 22 Mar 2016
Event	10th IEEE Nanotechnology Materials and Devices Conference, NMDC 2015 - Anchorage, United States Duration: 12 Sep 2015 → 16 Sep 2015

Publication series

Name	2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015

Conference

Conference	10th IEEE Nanotechnology Materials and Devices Conference, NMDC 2015
Country/Territory	United States
City	Anchorage
Period	12/09/15 → 16/09/15

Keywords

CMOS
electrostatic discharge (ESD)
high-k metal-gate (HKMG)
silicon-controlled rectifier (SCR)

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10.1109/NMDC.2015.7439250

Cite this

Lin, C. Y., Ker, M-D., Chang, P. H., & Wang, W. T. (2016). Study on the ESD-induced gate-oxide breakdown and the protection solution in 28nm high-k metal-gate CMOS technology. In 2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015 [7439250] (2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NMDC.2015.7439250

Lin, Chun Yu ; Ker, Ming-Dou ; Chang, Pin Hsin et al. / Study on the ESD-induced gate-oxide breakdown and the protection solution in 28nm high-k metal-gate CMOS technology. 2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015. Institute of Electrical and Electronics Engineers Inc., 2016. (2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015).

@inproceedings{409684b418674c738371a9907fb73d60,

title = "Study on the ESD-induced gate-oxide breakdown and the protection solution in 28nm high-k metal-gate CMOS technology",

abstract = "To protect the IC chips against the electrostatic discharge (ESD) damages in 28nm high-k metal-gate (HKMG) CMOS technology, the ESD protection consideration was studied in this work. The ESD design window was found to be within 1V and 5.1V in 28nm HKMG CMOS technology. An ESD protection device of PMOS with embedded silicon-controlled rectifier (SCR) was investigated to be suitable for ESD protection in such narrow ESD design window.",

keywords = "CMOS, electrostatic discharge (ESD), high-k metal-gate (HKMG), silicon-controlled rectifier (SCR)",

author = "Lin, {Chun Yu} and Ming-Dou Ker and Chang, {Pin Hsin} and Wang, {Wen Tai}",

year = "2016",

month = mar,

day = "22",

doi = "10.1109/NMDC.2015.7439250",

language = "English",

series = "2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015",

address = "United States",

note = "null ; Conference date: 12-09-2015 Through 16-09-2015",

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Lin, CY, Ker, M-D, Chang, PH & Wang, WT 2016, Study on the ESD-induced gate-oxide breakdown and the protection solution in 28nm high-k metal-gate CMOS technology. in 2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015., 7439250, 2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015, Institute of Electrical and Electronics Engineers Inc., 10th IEEE Nanotechnology Materials and Devices Conference, NMDC 2015, Anchorage, United States, 12/09/15. https://doi.org/10.1109/NMDC.2015.7439250

Study on the ESD-induced gate-oxide breakdown and the protection solution in 28nm high-k metal-gate CMOS technology. / Lin, Chun Yu; Ker, Ming-Dou; Chang, Pin Hsin et al.

2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015. Institute of Electrical and Electronics Engineers Inc., 2016. 7439250 (2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Study on the ESD-induced gate-oxide breakdown and the protection solution in 28nm high-k metal-gate CMOS technology

AU - Lin, Chun Yu

AU - Ker, Ming-Dou

AU - Chang, Pin Hsin

AU - Wang, Wen Tai

PY - 2016/3/22

Y1 - 2016/3/22

N2 - To protect the IC chips against the electrostatic discharge (ESD) damages in 28nm high-k metal-gate (HKMG) CMOS technology, the ESD protection consideration was studied in this work. The ESD design window was found to be within 1V and 5.1V in 28nm HKMG CMOS technology. An ESD protection device of PMOS with embedded silicon-controlled rectifier (SCR) was investigated to be suitable for ESD protection in such narrow ESD design window.

AB - To protect the IC chips against the electrostatic discharge (ESD) damages in 28nm high-k metal-gate (HKMG) CMOS technology, the ESD protection consideration was studied in this work. The ESD design window was found to be within 1V and 5.1V in 28nm HKMG CMOS technology. An ESD protection device of PMOS with embedded silicon-controlled rectifier (SCR) was investigated to be suitable for ESD protection in such narrow ESD design window.

KW - CMOS

KW - electrostatic discharge (ESD)

KW - high-k metal-gate (HKMG)

KW - silicon-controlled rectifier (SCR)

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U2 - 10.1109/NMDC.2015.7439250

DO - 10.1109/NMDC.2015.7439250

M3 - Conference contribution

AN - SCOPUS:84968724790

T3 - 2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015

BT - 2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 12 September 2015 through 16 September 2015

ER -

Lin CY, Ker M-D, Chang PH, Wang WT. Study on the ESD-induced gate-oxide breakdown and the protection solution in 28nm high-k metal-gate CMOS technology. In 2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015. Institute of Electrical and Electronics Engineers Inc. 2016. 7439250. (2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015). doi: 10.1109/NMDC.2015.7439250

Study on the ESD-induced gate-oxide breakdown and the protection solution in 28nm high-k metal-gate CMOS technology

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