Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride

T. C. Chang; S. T. Yan; Po-Tsun Liu; C. W. Chen; Y. C. Wu; S. M. Sze

doi:10.1149/1.1695537

Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride

T. C. Chang^*, S. T. Yan, Po-Tsun Liu, C. W. Chen, Y. C. Wu, S. M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

With the replacement of silicon nitride in an oxide/nitride/oxide (ONO) gate-stacked structure, trap-rich high-density plasma chemical vapor deposited (HDPCVD) SiN_x. shows a more significant threshold-voltage shift (memory window) than that of conventional low pressure (LP) CVD Si ₃N₄. Also, low-temperature (200°C) deposited HDPCVD silicon nitride shows a good retention characteristic, the same as high-temperature (780°C) LPCVD Si₃N₄. With the optimization of thickness in the gate-stacked ONO structure, low-voltage and reliable operation, lower than 5 V, is realizable.

Original language	English
Pages (from-to)	G113-G115
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	6
DOIs	https://doi.org/10.1149/1.1695537
State	Published - 16 Jun 2004

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title = "Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride",

abstract = "With the replacement of silicon nitride in an oxide/nitride/oxide (ONO) gate-stacked structure, trap-rich high-density plasma chemical vapor deposited (HDPCVD) SiNx. shows a more significant threshold-voltage shift (memory window) than that of conventional low pressure (LP) CVD Si 3N4. Also, low-temperature (200°C) deposited HDPCVD silicon nitride shows a good retention characteristic, the same as high-temperature (780°C) LPCVD Si3N4. With the optimization of thickness in the gate-stacked ONO structure, low-voltage and reliable operation, lower than 5 V, is realizable.",

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T1 - Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride

AU - Chang, T. C.

AU - Yan, S. T.

AU - Liu, Po-Tsun

AU - Chen, C. W.

AU - Wu, Y. C.

AU - Sze, S. M.

PY - 2004/6/16

Y1 - 2004/6/16

N2 - With the replacement of silicon nitride in an oxide/nitride/oxide (ONO) gate-stacked structure, trap-rich high-density plasma chemical vapor deposited (HDPCVD) SiNx. shows a more significant threshold-voltage shift (memory window) than that of conventional low pressure (LP) CVD Si 3N4. Also, low-temperature (200°C) deposited HDPCVD silicon nitride shows a good retention characteristic, the same as high-temperature (780°C) LPCVD Si3N4. With the optimization of thickness in the gate-stacked ONO structure, low-voltage and reliable operation, lower than 5 V, is realizable.

AB - With the replacement of silicon nitride in an oxide/nitride/oxide (ONO) gate-stacked structure, trap-rich high-density plasma chemical vapor deposited (HDPCVD) SiNx. shows a more significant threshold-voltage shift (memory window) than that of conventional low pressure (LP) CVD Si 3N4. Also, low-temperature (200°C) deposited HDPCVD silicon nitride shows a good retention characteristic, the same as high-temperature (780°C) LPCVD Si3N4. With the optimization of thickness in the gate-stacked ONO structure, low-voltage and reliable operation, lower than 5 V, is realizable.

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DO - 10.1149/1.1695537

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SP - G113-G115

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 6

ER -

Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride

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