@inproceedings{6aacefa7b19b4e9b96611729b2613111,
title = "Study on random telegraph noise of gate-ail-around poly-Si junctionless nanowire transistors",
abstract = "In this work we study the random telegraph noise (RTN) characteristics of short-channel gate-all-around (GAA) poly-Si junctionless (JL) nanowire (NW) transistors. The test devices were fabricated with I-line-based lithography in combination with novel spacer-etching techniques for aggressively shrinking the channel dimension. Based on the tiny nanowire channel and short-channel length, we are able to detect clear RTN signals as the gate voltage is sufficiently large. Location of the trap responsible for the RTN is estimated to be 1.13 nm within the gate oxide away from the oxide/channel interface.",
author = "Yang, {Chen Chen} and Peng, {Kang Ping} and Chen, {Yung Chen} and Horng-Chih Lin and Pei-Wen Li",
note = "Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",
year = "2017",
month = dec,
day = "29",
doi = "10.23919/SNW.2017.8242289",
language = "English",
series = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "45--46",
booktitle = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
address = "美國",
}