Study on oxygen-dependent instability of amorphous In-Ga-Zn-O TFT and completely stable device under both positive and negative bias stresses

Wei Tsung Chen; Hsiao-Wen Zan; Shih Yi Lo; Shih Chin Kao; Chuang Chuang Tsai; Jian Hong Lin; Chun Hsiang Fang; Chung Chun Lee

Study on oxygen-dependent instability of amorphous In-Ga-Zn-O TFT and completely stable device under both positive and negative bias stresses

Wei Tsung Chen^*, Hsiao-Wen Zan, Shih Yi Lo, Shih Chin Kao, Chuang Chuang Tsai, Jian Hong Lin, Chun Hsiang Fang, Chung Chun Lee

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to conference › Paper › peer-review

Abstract

A complete experiment is conducted to verify the origin of stress-induced instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). It is found that the oxygen ratio in an IGZO layer strongly influences the device stability under bias stress. For realizing an adequately stable device, post-annealing and passivation are performed in order.

Original language	English
Pages	763-765
Number of pages	3
State	Published - 1 Dec 2010
Event	17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 1 Dec 2010 → 3 Dec 2010

Conference

Conference	17th International Display Workshops, IDW'10
Country/Territory	Japan
City	Fukuoka
Period	1/12/10 → 3/12/10

Cite this

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title = "Study on oxygen-dependent instability of amorphous In-Ga-Zn-O TFT and completely stable device under both positive and negative bias stresses",

abstract = "A complete experiment is conducted to verify the origin of stress-induced instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). It is found that the oxygen ratio in an IGZO layer strongly influences the device stability under bias stress. For realizing an adequately stable device, post-annealing and passivation are performed in order.",

author = "Chen, {Wei Tsung} and Hsiao-Wen Zan and Lo, {Shih Yi} and Kao, {Shih Chin} and Tsai, {Chuang Chuang} and Lin, {Jian Hong} and Fang, {Chun Hsiang} and Lee, {Chung Chun}",

year = "2010",

month = dec,

day = "1",

language = "English",

pages = "763--765",

note = "17th International Display Workshops, IDW'10 ; Conference date: 01-12-2010 Through 03-12-2010",

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TY - CONF

T1 - Study on oxygen-dependent instability of amorphous In-Ga-Zn-O TFT and completely stable device under both positive and negative bias stresses

AU - Chen, Wei Tsung

AU - Zan, Hsiao-Wen

AU - Lo, Shih Yi

AU - Kao, Shih Chin

AU - Tsai, Chuang Chuang

AU - Lin, Jian Hong

AU - Fang, Chun Hsiang

AU - Lee, Chung Chun

PY - 2010/12/1

Y1 - 2010/12/1

N2 - A complete experiment is conducted to verify the origin of stress-induced instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). It is found that the oxygen ratio in an IGZO layer strongly influences the device stability under bias stress. For realizing an adequately stable device, post-annealing and passivation are performed in order.

AB - A complete experiment is conducted to verify the origin of stress-induced instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). It is found that the oxygen ratio in an IGZO layer strongly influences the device stability under bias stress. For realizing an adequately stable device, post-annealing and passivation are performed in order.

UR - http://www.scopus.com/inward/record.url?scp=79956299037&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79956299037

SP - 763

EP - 765

T2 - 17th International Display Workshops, IDW'10

Y2 - 1 December 2010 through 3 December 2010

ER -

Study on oxygen-dependent instability of amorphous In-Ga-Zn-O TFT and completely stable device under both positive and negative bias stresses

Abstract

Conference

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