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Study on Optoelectronic Characteristics of ZnGa
2
O
4
Thin-Film Phototransistors
Yuan Chu Shen
, Chun Yi Tung
, Chiung Yi Huang
, Yu Chang Lin
, Yan Gu Lin
,
Ray Hua Horng
*
*
Corresponding author for this work
Center for Emergent Functional Matter Science
Institute of Electronics
Research output
:
Contribution to journal
›
Article
›
peer-review
39
Scopus citations
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2
O
4
Thin-Film Phototransistors'. Together they form a unique fingerprint.
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Keyphrases
Electro-optical Characteristics
100%
Phototransistor
100%
ZnGa2O4
100%
Deep Ultraviolet
66%
Metal-organic Chemical Vapor Deposition (MOCVD)
33%
Threshold Voltage Shift
33%
Photodetector
33%
Transistor
33%
Current Ratio
33%
Responsivity
33%
Photocurrent
33%
Dark Current
33%
Incident Light
33%
Optical Response
33%
Device Application
33%
Gate Control
33%
Photocurrent Response
33%
Rise Time
33%
High Photoresponsivity
33%
Ultraviolet Phototransistors
33%
Ultraviolet Optoelectronics
33%
Engineering
Optoelectronics
100%
Phototransistor
100%
Photocurrent
50%
Photodetector
25%
Metal Organic Chemical Vapor Deposition
25%
Current Ratio
25%
Responsivity
25%
Light Incident
25%
Promising Candidate
25%
Control Gate
25%
Optoelectronic Device
25%
Material Science
Transistor
100%
Metal-Organic Chemical Vapor Deposition
100%