Study on Optoelectronic Characteristics of ZnGa2O4Thin-Film Phototransistors

Yuan Chu Shen; Chun Yi Tung; Chiung Yi Huang; Yu Chang Lin; Yan Gu Lin; Ray Hua Horng

doi:10.1021/acsaelm.9b00128

Study on Optoelectronic Characteristics of ZnGa₂O₄Thin-Film Phototransistors

Yuan Chu Shen, Chun Yi Tung, Chiung Yi Huang, Yu Chang Lin, Yan Gu Lin, Ray Hua Horng^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Deep ultraviolet (DUV) phototransistors with high photoresponsivity are fabricated on ZnGa2O4 grown by metal-organic chemical-vapor deposition. Owing to transistor actions, the photodetector meets to a large photocurrent and optical response. When illuminated with photon wavelength within the range of 200-250 nm, the ZnGa2O4-based phototransistor presented a large responsivity, especially 1.51 × 106 A/W as the incident light at 210 nm with 1.73 μW/cm2. It was also observed that the photocurrent/dark current ratio and rising time can be improved by gate control, which is related to threshold voltage shifting when under illumination. These results demonstrate ZnGa2O4-based phototransistor is a very promising candidate for DUV optoelectronic devices applications.

Original language	English
Pages (from-to)	783-788
Number of pages	6
Journal	ACS Applied Electronic Materials
Volume	1
Issue number	5
DOIs	https://doi.org/10.1021/acsaelm.9b00128
State	Published - 28 May 2019

Keywords

DUV phototransistors
metal-organic chemical-vapor deposition
photodetectors
phototransistors
ZnGaO

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10.1021/acsaelm.9b00128

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title = "Study on Optoelectronic Characteristics of ZnGa2O4Thin-Film Phototransistors",

abstract = "Deep ultraviolet (DUV) phototransistors with high photoresponsivity are fabricated on ZnGa2O4 grown by metal-organic chemical-vapor deposition. Owing to transistor actions, the photodetector meets to a large photocurrent and optical response. When illuminated with photon wavelength within the range of 200-250 nm, the ZnGa2O4-based phototransistor presented a large responsivity, especially 1.51 × 106 A/W as the incident light at 210 nm with 1.73 μW/cm2. It was also observed that the photocurrent/dark current ratio and rising time can be improved by gate control, which is related to threshold voltage shifting when under illumination. These results demonstrate ZnGa2O4-based phototransistor is a very promising candidate for DUV optoelectronic devices applications. ",

keywords = "DUV phototransistors, metal-organic chemical-vapor deposition, photodetectors, phototransistors, ZnGaO",

author = "Shen, {Yuan Chu} and Tung, {Chun Yi} and Huang, {Chiung Yi} and Lin, {Yu Chang} and Lin, {Yan Gu} and Horng, {Ray Hua}",

note = "Publisher Copyright: Copyright {\textcopyright} 2019 American Chemical Society.",

year = "2019",

month = may,

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doi = "10.1021/acsaelm.9b00128",

language = "English",

volume = "1",

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journal = "ACS Applied Electronic Materials",

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publisher = "American Chemical Society",

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T1 - Study on Optoelectronic Characteristics of ZnGa2O4Thin-Film Phototransistors

AU - Shen, Yuan Chu

AU - Tung, Chun Yi

AU - Huang, Chiung Yi

AU - Lin, Yu Chang

AU - Lin, Yan Gu

AU - Horng, Ray Hua

PY - 2019/5/28

Y1 - 2019/5/28

N2 - Deep ultraviolet (DUV) phototransistors with high photoresponsivity are fabricated on ZnGa2O4 grown by metal-organic chemical-vapor deposition. Owing to transistor actions, the photodetector meets to a large photocurrent and optical response. When illuminated with photon wavelength within the range of 200-250 nm, the ZnGa2O4-based phototransistor presented a large responsivity, especially 1.51 × 106 A/W as the incident light at 210 nm with 1.73 μW/cm2. It was also observed that the photocurrent/dark current ratio and rising time can be improved by gate control, which is related to threshold voltage shifting when under illumination. These results demonstrate ZnGa2O4-based phototransistor is a very promising candidate for DUV optoelectronic devices applications.

AB - Deep ultraviolet (DUV) phototransistors with high photoresponsivity are fabricated on ZnGa2O4 grown by metal-organic chemical-vapor deposition. Owing to transistor actions, the photodetector meets to a large photocurrent and optical response. When illuminated with photon wavelength within the range of 200-250 nm, the ZnGa2O4-based phototransistor presented a large responsivity, especially 1.51 × 106 A/W as the incident light at 210 nm with 1.73 μW/cm2. It was also observed that the photocurrent/dark current ratio and rising time can be improved by gate control, which is related to threshold voltage shifting when under illumination. These results demonstrate ZnGa2O4-based phototransistor is a very promising candidate for DUV optoelectronic devices applications.

KW - DUV phototransistors

KW - metal-organic chemical-vapor deposition

KW - photodetectors

KW - phototransistors

KW - ZnGaO

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Study on Optoelectronic Characteristics of ZnGa₂O₄Thin-Film Phototransistors

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