@inproceedings{7e60cede982d4b2eae6d839cdad319c2,
title = "Study on Amorphous InGaZnO thin film transistors optimized by oxygen neutral beam treatment",
abstract = "Amorphous InGaZnO (a-IGZO) is used as TFTs channel layer, it is deposited with atmospheric-pressure PECVD (AP-PECVD). By AP-PECVD, a-IGZO can be deposited without vacuum system, and keep the cost down and applied to large area manufacturing. To further improve the electrical characteristics of atmospheric-pressure deposited a-IGZO (AP-IGZO) TFTs, post processing by re-oxidation (NBRO) is applied to treat on top of AP-IGZO thin film. The investigation shows when the NBRO post-deposited annealing (PDA) power is 400W for 300 seconds, better electrical characteristic is achieved as mobility of 10.78 cm2/Vs, small subthreshold swing of 100 mV/dec, lower off-state leakage current 3.7×10-12 A, and better Ion/Ioff ratio of 2.76×106.",
keywords = "AP-PECVD, Neutral beam re-oxidation (NBRO), a-IGZO TFTs",
author = "Wu, {C. H.} and Chang, {K. M.} and Chen, {Y. M.} and Huang, {B. W.} and Zhang, {Y. X.} and S. Samukawa and S. Noda and Li, {Y. M.} and Wang, {S. J.} and Shih, {B. J.} and Kow-Ming Chang and Wu, {C. H.}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2nd International Conference on Communication and Electronics Systems, ICCES 2017 ; Conference date: 19-10-2017 Through 20-10-2017",
year = "2017",
month = jul,
day = "2",
doi = "10.1109/CESYS.2017.8321130",
language = "English",
series = "Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "517--520",
booktitle = "Proceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017",
address = "United States",
}