Study of tri-gate AlGaN/GaN MOS-HEMTs for power application

Kuan Ning Huang*, Yueh Chin Lin, Jin Hwa Lee, Chia Chieh Hsu, Jing Neng Yao, Chieh Ying Wu, Chao Hsin Chien, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


In this letter, we present high-performance AlGaN/GaN high electron mobility transistor (HEMT) by 3-dimensional (3D) tri-gate. Due to the excellent channel control of tri-gate structure, the tri-gate HEMT shows the low subthreshold swing (SS) of 65 mV/decade, low off-state drain leakage current (Ioff) of 7 nA/mm, and On/Off ratio up to 7.6 × 107. Furthermore, we combined the tri-gate structure and metal oxide semiconductor (MOS) structure. The tri-gate MOS-HEMT with high-k dielectric oxide HfO2 was fabricated. The good interface between HfO2 and AlGaN and strain-induce polarization increase the carrier concentration. Compared to the tri-gate HEMT, the increased maximum drain current, higher On/Off ratio and better breakdown voltage is demonstrated by implanted the high k dielectric HfO2. The improved electrical performance of tri-gate MOS-HEMT shows potential for next generation power application.

Original languageEnglish
Article number100073
JournalMicro and Nano Engineering
StatePublished - Nov 2020


  • AlGaN/GaN HEMT
  • HfO
  • High-k dielectric oxide
  • Subthreshold swing
  • Tri-gate MOS-HEMT
  • Tri-gate structure


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