Abstract
In this study, thin-film blue-light micro-light-emitting diodes ( μ LEDs) were successfully fabricated by laser lift-off technique, which had an emission region of only 10μ m× 10μ m. Additionally, a texturing treatment was applied to the top undoped GaN surface. The texturing time was optimized to prevent a total reflective effect and further enhance the light extraction efficiency. As a result, the emission output power (@ 30 mA) and EQEmax of the μ LED textured for 2 minutes exhibited 1.35 times and 1.64 times higher values as compared with those of μ LED with a sapphire substrate, respectively.
Original language | English |
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Pages (from-to) | 212-215 |
Number of pages | 4 |
Journal | Ieee Electron Device Letters |
Volume | 45 |
Issue number | 2 |
DOIs | |
State | Published - 1 Feb 2024 |
Keywords
- GaN texture
- Micro-LED
- laser lift-off
- light extraction