Study of the erase mechanism of MANOS (Metal/Al2O3/ SiN/SiO2/Si) device

Sheng Chin Lai; Hang Ting Lue; Jong Yu Hsieh; Ming Jui Yang; Yan Kai Chiou; Chia Wei Wu; Tai Bor Wu; Guang Li Luo; Chao-Hsin Chien; Erh Kun Lai; Kuang Yeu Hsieh; Rich Liu; Chih Yuan Lu

doi:10.1109/LED.2007.899993

Study of the erase mechanism of MANOS (Metal/Al₂O₃/ SiN/SiO₂/Si) device

Sheng Chin Lai^*, Hang Ting Lue, Jong Yu Hsieh, Ming Jui Yang, Yan Kai Chiou, Chia Wei Wu, Tai Bor Wu, Guang Li Luo, Chao-Hsin Chien, Erh Kun Lai, Kuang Yeu Hsieh, Rich Liu, Chih Yuan Lu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The erase characteristics and mechanism of Al₂O₃ -nitride-oxide-silicon (MANOS) devices are extensively studied. We use transient analysis to transform the erase curve (V_FB-time) into a J-E curve (J = transient current, E = field in the tunnel oxide) in order to understand the underlying physics. The measured erase current of MANOS is three orders of magnitude higher than that can be theoretically provided by substrate hole current. In addition, the erase current is very sensitive to the Al₂O₃ processing condition-also inconsistent with substrate hole injection model. Thus, we propose that MANOS erase occurs through an electron detrapping mechanism. We have further carried out a refill test and its results support the detrapping model. Our results suggest that the interfacial layer between Al₂O₃ and nitride is a key process that dominates the erase mechanism of MANOS.

Original language	English
Pages (from-to)	643-645
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	7
DOIs	https://doi.org/10.1109/LED.2007.899993
State	Published - 1 Jul 2007

Keywords

AlO blocking layer
Metal-AlO-nitride-oxide-silicon (MANOS)
Metal-oxide-nitride-oxide-semiconductor (MONOS)
Refill test
Transient analysis

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10.1109/LED.2007.899993

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title = "Study of the erase mechanism of MANOS (Metal/Al2O3/ SiN/SiO2/Si) device",

abstract = "The erase characteristics and mechanism of Al2O3 -nitride-oxide-silicon (MANOS) devices are extensively studied. We use transient analysis to transform the erase curve (VFB-time) into a J-E curve (J = transient current, E = field in the tunnel oxide) in order to understand the underlying physics. The measured erase current of MANOS is three orders of magnitude higher than that can be theoretically provided by substrate hole current. In addition, the erase current is very sensitive to the Al2O3 processing condition-also inconsistent with substrate hole injection model. Thus, we propose that MANOS erase occurs through an electron detrapping mechanism. We have further carried out a refill test and its results support the detrapping model. Our results suggest that the interfacial layer between Al2O3 and nitride is a key process that dominates the erase mechanism of MANOS.",

keywords = "AlO blocking layer, Metal-AlO-nitride-oxide-silicon (MANOS), Metal-oxide-nitride-oxide-semiconductor (MONOS), Refill test, Transient analysis",

author = "Lai, {Sheng Chin} and Lue, {Hang Ting} and Hsieh, {Jong Yu} and Yang, {Ming Jui} and Chiou, {Yan Kai} and Wu, {Chia Wei} and Wu, {Tai Bor} and Luo, {Guang Li} and Chao-Hsin Chien and Lai, {Erh Kun} and Hsieh, {Kuang Yeu} and Rich Liu and Lu, {Chih Yuan}",

year = "2007",

month = jul,

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doi = "10.1109/LED.2007.899993",

language = "English",

volume = "28",

pages = "643--645",

journal = "IEEE Electron Device Letters",

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T1 - Study of the erase mechanism of MANOS (Metal/Al2O3/ SiN/SiO2/Si) device

AU - Lai, Sheng Chin

AU - Lue, Hang Ting

AU - Hsieh, Jong Yu

AU - Yang, Ming Jui

AU - Chiou, Yan Kai

AU - Wu, Chia Wei

AU - Wu, Tai Bor

AU - Luo, Guang Li

AU - Chien, Chao-Hsin

AU - Lai, Erh Kun

AU - Hsieh, Kuang Yeu

AU - Liu, Rich

AU - Lu, Chih Yuan

PY - 2007/7/1

Y1 - 2007/7/1

N2 - The erase characteristics and mechanism of Al2O3 -nitride-oxide-silicon (MANOS) devices are extensively studied. We use transient analysis to transform the erase curve (VFB-time) into a J-E curve (J = transient current, E = field in the tunnel oxide) in order to understand the underlying physics. The measured erase current of MANOS is three orders of magnitude higher than that can be theoretically provided by substrate hole current. In addition, the erase current is very sensitive to the Al2O3 processing condition-also inconsistent with substrate hole injection model. Thus, we propose that MANOS erase occurs through an electron detrapping mechanism. We have further carried out a refill test and its results support the detrapping model. Our results suggest that the interfacial layer between Al2O3 and nitride is a key process that dominates the erase mechanism of MANOS.

AB - The erase characteristics and mechanism of Al2O3 -nitride-oxide-silicon (MANOS) devices are extensively studied. We use transient analysis to transform the erase curve (VFB-time) into a J-E curve (J = transient current, E = field in the tunnel oxide) in order to understand the underlying physics. The measured erase current of MANOS is three orders of magnitude higher than that can be theoretically provided by substrate hole current. In addition, the erase current is very sensitive to the Al2O3 processing condition-also inconsistent with substrate hole injection model. Thus, we propose that MANOS erase occurs through an electron detrapping mechanism. We have further carried out a refill test and its results support the detrapping model. Our results suggest that the interfacial layer between Al2O3 and nitride is a key process that dominates the erase mechanism of MANOS.

KW - AlO blocking layer

KW - Metal-AlO-nitride-oxide-silicon (MANOS)

KW - Metal-oxide-nitride-oxide-semiconductor (MONOS)

KW - Refill test

KW - Transient analysis

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DO - 10.1109/LED.2007.899993

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VL - 28

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

Study of the erase mechanism of MANOS (Metal/Al₂O₃/ SiN/SiO₂/Si) device

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