Study of Schottky barriers on n-type GaN grown by LP-MOCVD

J. D. Guo*, M. S. Feng, Fu-Ming Pan

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

The Schottky barrier height of metals (Pt, Pd, Au, Ni, and Ti) on n-GaN has been measured by C-V and J-T methods. Comparison of the Schottky characteristics of those metals are discussed. Ni on GaN dose not follow the rule of S=1 for GaN. The metal work function of Ni is high but the Schottky barrier height is low. The metal work function of Ag is about 4.26 eV, but the Schottky barrier height is about 1.2 eV. We think that it is because of the interactions between the metal and the semiconductor dominate the Schottky behavior.

Original languageEnglish
Pages515-517
Number of pages3
StatePublished - 1 Dec 1995
EventProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: 24 Oct 199528 Oct 1995

Conference

ConferenceProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period24/10/9528/10/95

Fingerprint

Dive into the research topics of 'Study of Schottky barriers on n-type GaN grown by LP-MOCVD'. Together they form a unique fingerprint.

Cite this