Study of p-GaN Gate MOS-HEMT with Al2O3 Insulator for High-Power Applications

Kuan Ning Huang*, Yueh Chin Lin, Chieh Ying Wu, Jin Hwa Lee, Chia Chieh Hsu, Jing Neng Yao, Chao Hsin Chien, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Fingerprint

Dive into the research topics of 'Study of p-GaN Gate MOS-HEMT with Al2O3 Insulator for High-Power Applications'. Together they form a unique fingerprint.

Keyphrases

Engineering

Material Science