Study of low-temperature and post-stress hysteresis in high-k gate dielectrics

You Lin Wu; Shi Tin Lin; Chang Cheng Yang; Chien Hung Wu; Albert Chin

doi:10.1109/ISDRS.2007.4422317

Study of low-temperature and post-stress hysteresis in high-k gate dielectrics

You Lin Wu^*, Shi Tin Lin, Chang Cheng Yang, Chien Hung Wu, Albert Chin

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422317
State	Published - 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 12 Dec 2007 → 14 Dec 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 14/12/07

Access to Document

10.1109/ISDRS.2007.4422317

Cite this

@inproceedings{77ac141121b5483d9b062e3ff80180d1,

title = "Study of low-temperature and post-stress hysteresis in high-k gate dielectrics",

author = "Wu, {You Lin} and Lin, {Shi Tin} and Yang, {Chang Cheng} and Wu, {Chien Hung} and Albert Chin",

year = "2007",

doi = "10.1109/ISDRS.2007.4422317",

language = "English",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Wu, YL, Lin, ST, Yang, CC, Wu, CH & Chin, A 2007, Study of low-temperature and post-stress hysteresis in high-k gate dielectrics. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422317, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422317

Study of low-temperature and post-stress hysteresis in high-k gate dielectrics. / Wu, You Lin; Lin, Shi Tin; Yang, Chang Cheng et al.
2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422317 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Study of low-temperature and post-stress hysteresis in high-k gate dielectrics

AU - Wu, You Lin

AU - Lin, Shi Tin

AU - Yang, Chang Cheng

AU - Wu, Chien Hung

AU - Chin, Albert

PY - 2007

Y1 - 2007

UR - http://www.scopus.com/inward/record.url?scp=44949161211&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2007.4422317

DO - 10.1109/ISDRS.2007.4422317

M3 - Conference contribution

AN - SCOPUS:44949161211

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -

Study of low-temperature and post-stress hysteresis in high-k gate dielectrics

Publication series

Conference

Access to Document

Other files and links

Cite this